Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Martin Niehoff"'
Autor:
Nathan G. Greeneltch, Haizhou Yin, Juan A. Torres, Melody Tao, Steven M. Lubin, Srividya Jayaram, Ivan Kissiov, Martin Niehoff, Marcus Wolf, Paul Jungmann, Todd C. Bailey
Publikováno v:
DTCO and Computational Patterning II.
Autor:
Mohamed Essam, J. Andres Torres, Ivan Kissiov, Richard Gardner, Ken Jantzen, Carsten Hartig, Stefan Schueler, Martin Niehoff
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In the past, concepts like critical area analysis, have been successfully implemented to predict random and systematic layout induced effects. This has enabled semiconductor companies to have an initial estimate as to how a fixed process will respond
Publikováno v:
SPIE Proceedings.
Selective Inverse Lithography (ILT) approach recently introduced by authors [1] has proven to be advantageous for extending life-span of lower-NA 193nm exposure tools to achieve satisfactory 65nm contact layer patterning. We intend to find an alterna
Publikováno v:
SPIE Proceedings.
With escalating costs of higher-NA exposure tools, lithography engineers are forced to evaluate life-span extension of currently available lower-NA exposure tools. In addition to common resolution enhancement techniques such as off-axis illumination,
Autor:
Sebastian Geisler, E. Matthus, Joachim Bauer, R. Pliquett, Ulrich A. Jagdhold, Harald Beyer, U. Baetz, Martin Niehoff, Ulrich Haak, R. Schrader, H. Wolf
Publikováno v:
SPIE Proceedings.
We present results for a rule based optical proximity (RB-OPC) and a model based optical proximity correction (MB-OPC) for 0.13 μm SiGe:C BiCMOS technology. The technology provides integrated high performance heterojunction bipolar transistors (HBTs
Autor:
Ingo Meusel, Jens Schneider, Vlad Temchenko, Sebastian Schmidt, Martin Niehoff, ChinTeong Lim, Dieter Kaiser
Publikováno v:
Optical Microlithography XXI.
Including etch-based empirical data during OPC model calibration is a desired yet controversial decision for OPC modeling, especially for process with a large litho to etch biasing. While many OPC software tools are capable of providing this function
Publikováno v:
Optical Microlithography XXI.
The growing importance of mask simulation in a low-k1 realm is matched by an increasing need for numerical methods capable of handling complex 3D configurations. Various approximations applied to physical parameters or boundary conditions allowed a f
Publikováno v:
SPIE Proceedings.
Model-based Optical Proximity Correction (OPC) usually takes into consideration optical and resist process proximity effects. However, the etch bias proximity effect usually can not be completely eliminated by etch process optimization only and needs
Autor:
Dieter Kaiser, Chin Teong Lim, Martin Niehoff, Vlad Temchenko, Kai Peter, Dave Wallis, Sebastian Schmidt, Ingo Meusel
Publikováno v:
SPIE Proceedings.
In the recent year tools for DFM (Design for Manufacturing) addressing the lithographic pattern transfer like LfD have evolved besides OPC (Optical Proximity Correction) to reduce the time required from design to manufacturing along the design to mas
Autor:
Martin Niehoff, M. C. Keck, C. Bodendorf, Robert Wildfeuer, S. Zumpe, R. Schlief, T. Schmidtling
Publikováno v:
SPIE Proceedings.
Modular OPC modeling, describing mask, optics, resist and etch processes separately is an approach to keep efforts for OPC manageable. By exchanging single modules of a modular OPC model, a fast response to process changes during process development