Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Martin Lowisch"'
Autor:
Rudy Peeters, Joerg Mallman, Noreen Harned, Guido Schiffelers, Judon Stoeldraijer, David C. Brandt, Martijn van Noordenburg, Peter Kuerz, Herman Boom, Hans Meiling, Igor V. Fomenkov, Nigel Farrar, Alberto Pirati, Ron Kool, Sjoerd Lok, Eelco van Setten, Martin Lowisch
Publikováno v:
SPIE Proceedings.
The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML’s third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV exper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5cfe941299b3433039ded216c54a839
https://doi.org/10.1117/12.2046909
https://doi.org/10.1117/12.2046909
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Shipping in 2013, the NXE:3300 is the second generation of ASML’s EUV exposure platform. We review the current status of EUV optics production for the NXE:3300 tools. Four customer systems of the StarlithTM3300 series have been delivered so far. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedc815dfedfe188ce5bf09a726f76ab
https://doi.org/10.1117/12.2012158
https://doi.org/10.1117/12.2012158
Autor:
David Ockwell, Robert Kazinczi, Ron Kool, Rudy Peeters, Noreen Harned, Judon Stoeldraijer, Henk Meijer, Jan-Willem van der Horst, Peter Kuerz, Sjoerd Lok, Guido Schiffelers, Richard Droste, Erwin Antonius Martinus Van Alphen, Martin Lowisch, Hans Meiling, Eelco van Setten
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c87eda9782ec9c610146e0f23e4c4ef
https://doi.org/10.1117/12.2010932
https://doi.org/10.1117/12.2010932
Autor:
David Ockwell, Frank Bornebroek, Hans Meiling, Noreen Harned, Peter Kűrz, Ivo de Jong, Rudy Peeters, Ron Kool, Stuart Young, Martin Lowisch, Judon Stoeldraijer, Christian Wagner, Wim de Boeij, Henk Meijer, Eelco van Setten
Publikováno v:
SPIE Proceedings.
ASML's NXE platform is a multi-generation TWINSCAN™ platform using an exposure wavelength of 13.5nm, featuring a plasma source, all-reflective optics, and dual stages operating in vacuum. The NXE:3100 is the first product of this NXE platform. With
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246ab0dc9536cc28ccd35294100d64c2
https://doi.org/10.1117/12.916971
https://doi.org/10.1117/12.916971
Autor:
John Zimmerman, Ivo de Jong, Rudy Peeters, Hans Meiling, Jose Bacelar, Alek C. Chen, Stef Hendriks, Noreen Harned, Leon Martin Levasier, Mark van de Kerkhof, David Ockwell, Eelco van Setten, Ron Kool, Judon Stoeldraijer, Stuart Young, Peter Kuerz, Erik Roelof Loopstra, Martin Lowisch, Christian Wagner
Publikováno v:
Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications.
With the 1st NXE:3100, 0.25NA and 0.8σ conventional illumination, being operational at a Semiconductor Manufacturer, we enter the next phase in EUVL implementation. Since 2006 process and early device verification has been done using the two Alpha D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c05c76da97674cab87efc4c9857c17e
https://doi.org/10.1109/vtsa.2011.5872264
https://doi.org/10.1109/vtsa.2011.5872264
Autor:
John Zimmerman, Ivo de Jong, Rudy Peeters, Hans Meiling, Erik Roelof Loopstra, David Ockwell, Christian Wagner, Stef Hendriks, Noreen Harned, Mark van de Kerkhof, Stuart Young, Martin Lowisch, Judon Stoeldraijer, Peter Kuerz, Ron Kool, Jose Bacelar, Leon Martin Levasier, Eelco van Setten
Publikováno v:
SPIE Proceedings.
With the 1st NXE:3100 being operational at a Semiconductor Manufacturer and a 2nd system being shipped at the time of writing this paper, we enter the next phase in the implementation of EUV Lithography. Since 2006 process and early device verificati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99fa9e612ac57b93bf405dee29f12bd
https://doi.org/10.1117/12.878603
https://doi.org/10.1117/12.878603
Autor:
David Ockwell, Christian Wagner, Hans Meiling, Judon Stoeldraijer, Noreen Harned, Bernd Thuering, Peter Kuerz, Rudy Peeters, Eelco van Setten, Koen van Ingen-Schenau, Martin Lowisch
Publikováno v:
SPIE Proceedings.
The NXE platform is a multi-generation EUV production platform that builds the technology, design and experience of both TWINSCAN™ and the two 0.25NA EUV tools (Alpha Demo Tools or ADT's) in use at two research centers for EUV process development.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0c209d3731d4ea83b3c1035c762a6f
https://doi.org/10.1117/12.845700
https://doi.org/10.1117/12.845700
Publikováno v:
SPIE Proceedings.
In 2005, Carl Zeiss SMT AG has shipped two sets of Optics for ASML's Alpha Demo Tools. This was the starting point for the introduction of full field EUV systems. Meanwhile imaging down to 25 nm was demonstrated with the ADT tools. Based on the learn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3fac959a0aa59e525a981642700e03a
https://doi.org/10.1117/12.848624
https://doi.org/10.1117/12.848624
Autor:
John Zimmerman, Peter Kürz, Joerg Mallman, Kevin Cummings, Christian Wagner, Andre van Dijk, Alek C. Chen, Hans Meiling, Bart Kessels, Sjoerd Lok, Roel De Jonge, Noreen Harned, Eelco van Setten, Peter Cheang, Bas Hultermans, Bill Pierson, Nico Buzing, Martin Lowisch
Publikováno v:
SPIE Proceedings.
Cost, cost, cost: that is what it is - ultimately - all about. Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the only technology that will enable this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02da6b273f79ac32970b79c18b40e924
https://doi.org/10.1117/12.845781
https://doi.org/10.1117/12.845781
Autor:
Bart Kessels, Peter Kürz, Hans Meiling, John Zimmerman, Kevin Cummings, Roel De Jonge, Andre van Dijk, Joerg Mallman, Bas Hultermans, Christian Wagner, Noreen Harned, Sjoerd Lok, Eelco van Setten, Bill Pierson, Nico Buzing, Martin Lowisch
Publikováno v:
Alternative Lithographic Technologies.
Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the technology that will enable this for 27nm production and below. ASML is actively engaged in the deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f094504ccdeacdc2c7fcaa2e003da87
https://doi.org/10.1117/12.814041
https://doi.org/10.1117/12.814041