Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Martin Keyn"'
Publikováno v:
ECS Transactions. 75:65-71
In this work we investigate the in situ growth of carbon nanotubes (CNTs) on different dielectric stacks for use in discrete field-effect transistor devices. While CNT growth is demonstrated on all stacks, only devices fabricated on atomic layer depo
Autor:
Udo Schwalke, Martin Keyn
Publikováno v:
ECS Transactions. 64:1-11
Incorporation of carbon nanotubes in conventional silicon technology to exploit their outstanding electrical properties offers opportunities in nanoelectronics. We report on a fabrication technique which utilizes catalytic nickel nano-clusters and ch
Publikováno v:
DTIS
In this work we use atomic force microscopy to investigate the influence of the annealing temperature on the formation of nano-clusters in our growth technique for carbon nanotubes. Cluster formation is carried out just before in situ growth of carbo
Autor:
Udo Schwalke, Martin Keyn
Publikováno v:
DTIS
In this work we use atomic force microscopy to explore carbon nanotubes (CNTs) which are grown by means of catalytic chemical vapor deposition (CCVD). The used process can be utilized to fabricate hundreds of carbon nanotube field-effect transistors
Publikováno v:
ECS Meeting Abstracts. :2334-2334
Carbon nanotubes (CNTs) exhibit intrinsic electrical properties superior to those of silicon. Working field-effect devices with CNTs as channel material (CNTFETs) have first been demonstrated on research level by Tans and coworkers [1]. Although prog
Autor:
Lorraine Rispal, Martin Keyn, Pia Juliane Wessely, Johannes Palm, Frank Wessely, Udo Schwalke
Publikováno v:
DTIS
In this paper we investigate the feasibility of carbon nanotubes (CNTs) for power applications. On the basis of a process which fabricates thousands of carbon nanotube field-effect transistors (CNTFETs) by means of catalytic chemical vapor deposition
Publikováno v:
DTIS
In the future of nanoelectronics, the use of pure silicon based devices will not be possible anymore since the limit of silicon are already reached. Carbon seems to be a great alternative to build high performance electronic devices. Carbon nanotube
Autor:
Martin Keyn, Udo Schwalke
Publikováno v:
ECS Meeting Abstracts. :1564-1564
In this work we report on a custom made contact layout which utilizes large scale parallelization of in situgrown carbon nanotubes (CNTs). If parallelization of CNTs is adapted to a carbon-silicon-hybrid technology for producing field-effect devices,