Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Martin Jay Seamons"'
Autor:
Chris Ngai, Christopher Dennis Bencher, Martin Jay Seamons, Bok Heon Kim, Deenesh Padhi, Cathy Cai
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 24:145-150
The self-aligned double patterning (SADP) module is a scheme to form 32 nm or 22 nm line structures that extend the useful range of either dry scanner or immersion scanner photolithography tools. Once reliable baseline processes for SADP flow have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81ab913f6f94d9818a3c3d09a6ffc55f
https://doi.org/10.1109/tsm.2011.2121096
https://doi.org/10.1109/tsm.2011.2121096
Autor:
Yuri Uritsky, Chris Ngai, Chorng-Ping Chang, Motoya Okazaki, Yufei Chen, Mani Thothadri, Paul V. Miller, Manjari Dutta, Deenesh Padhi, Wendy H. Yeh, Raymond Maas, Chris Lazik, Sen-Hou Ko, Stephan Sinkwitz, Martin Jay Seamons, Abraham Anapolsky
Publikováno v:
SPIE Proceedings.
The objective of this study was to examine the defect reduction effect of the wafer edge polishing step on the immersion lithography process. The experimental wafers were processed through a typical front end of line device manufacturing process and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98dca7331dce13eb97c78ea980795e05
https://doi.org/10.1117/12.773113
https://doi.org/10.1117/12.773113
Autor:
Jimin Zhang, A. Schwarm, Suketu A. Parikh, H. Li, Martin Jay Seamons, Rong Pan, Arulkumar Shanmugasundram, J. Paik, M. Sarfaty, R. Hung
Publikováno v:
13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).
Traditional semiconductor manufacturing relies on a fixed process-recipe combined with a classical statistical process control that is used to monitor the production process. Leading-edge manufacturing processes require higher levels of precision and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ea6c8aa7c11c84a0773b4b416641e8
https://doi.org/10.1109/asmc.2002.1001583
https://doi.org/10.1109/asmc.2002.1001583
Autor:
Sudha Rathi, Heraldo L. Botelho, Wendy H. Yeh, Hichem M'Saad, Derek R. Witty, Martin Jay Seamons, Jean Liu, Sang H. Ahn
Publikováno v:
MRS Proceedings. 782
A nitrogen-free (N-free) dielectric anti-reflective coating (DARC®) was cost-effectively developed in a plasma-enhanced chemical vapor deposition (PECVD) reactor to eliminate the 193nm resist poisoning interaction caused when N2O is used as a precur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98372c757142f63034b1f679b574050b
https://doi.org/10.1557/proc-782-a5.91
https://doi.org/10.1557/proc-782-a5.91
Publikováno v:
SPIE Proceedings.
A mapping reflectometer has been integrated into the load robotics of a multi-chamber, thin film deposition tool. Normal incidence reflectance metrology is used to monitor PE-CVD silicon oxynitride films. Reflectance data is modeled to obtain film th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbd19a77774619674efe4f1882d08737
https://doi.org/10.1117/12.386493
https://doi.org/10.1117/12.386493