Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Martin Jagelka"'
Autor:
Helena Kosnacova, Dusan Horvath, Maximilian Stremy, Michal Sobota, Patrik Bartos, Martin Jagelka, Tomas Zavodnik, Diana Vitazkova, Erik Foltan, Neven Vrcek, Erik Vavrinsky
Publikováno v:
IEEE Access, Vol 12, Pp 49106-49121 (2024)
Millions of individuals worldwide suffer from a motor disability, impeding their ability to perform daily tasks independently. Modern technologies, such as electrooculography (EOG), offer tools to enhance their quality of life. EOG, an electrophysiol
Externí odkaz:
https://doaj.org/article/30a343e6257e44b0be2b89694e3e10c0
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 361-368 (2021)
On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and high current switching. This paper describes design and development of a tester for double-pulse switching test and measure
Externí odkaz:
https://doaj.org/article/d2924298673f4413afdd8ee3d41699ed
Autor:
Jozef Kozarik, Krisztian Gasparek, Tomas Zavodnik, Lubos Cernaj, Martin Jagelka, Martin Donoval
Publikováno v:
2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2417f037141b4804d69f49a925fa4a4
https://doi.org/10.1109/asdam55965.2022.9966783
https://doi.org/10.1109/asdam55965.2022.9966783
Autor:
Jan Šumpich, Martin Jagelka
Barcoding of Dutch specimens of Lemonia dumi (Linnaeus, 1761) (Lepidoptera: Brahmaeidae) and a study of a large collection material of this species resulted in discovery of a new, hitherto undescribed species Lemonia batavorum sp. nov. Based on compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fd7a5dbd5464f51f952e5de21db4190
https://zenodo.org/record/5821086
https://zenodo.org/record/5821086
Autor:
Jaroslav Kováč, Milan Pavúk, Juraj Nevrela, Martin Donoval, Michal Micjan, Martin Weis, Jan Jakabovic, Miroslav Novota, Sona Kovacova, Peter Juhasz, Martin Jagelka, Marek Cigan
Publikováno v:
Applied Surface Science. 395:86-91
Conductive copolymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative to transparent conductive oxides because of its flexibility, transparency, and low-cost production. Four different secondar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23acc0a922b5f4c9d59b76c9072a9afb
https://doi.org/10.1016/j.apsusc.2016.05.076
https://doi.org/10.1016/j.apsusc.2016.05.076
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this paper we present the results of Unclamped Inductive Switching (UIS) measurements of power GaN HEMTs comprised of p-GaN gates. Typical test waveforms and basic description of effects during discharging period of inductor are presented and disc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1767ae89a3f93904a722bcd1cff6368c
https://doi.org/10.1109/asdam.2018.8544555
https://doi.org/10.1109/asdam.2018.8544555
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
In this paper we describe a low-power IoT parking sensor that uses changes in magnetic field to detect occupancy of a parking space. We describe the challenges that are involved in long term monitoring of magnetic field and communication with a backe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4cc99b815c4cbdaa6083adc2b2bf7e
https://doi.org/10.1109/asdam.2018.8544717
https://doi.org/10.1109/asdam.2018.8544717
Autor:
Daniel Donoval, Lubica Stuchlikova, Martin Jagelka, Ales Chvala, Juraj Marek, J. Drobny, J. Kozarik
Publikováno v:
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM).
This paper reports on an impact of repetitive high voltage hard switching on electrical performance of p-type gate normally off GaN power HEMTs. Hard-switching-related failure and degradation in such power p-GaN HEMTs is currently intensively studied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684568116f65489890a2d23fedb130ac
https://doi.org/10.1109/asdam.2018.8544542
https://doi.org/10.1109/asdam.2018.8544542
Autor:
Daniel Donoval, Martin Donoval, Juraj Marek, Lubica Stuchlikova, Patrik Pribytny, Ales Chvala, Martin Jagelka
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
An electrical ageing of three power MOS transistor types has been performed in order to investigate the gradual degradation in time (number of stress pulses) of the static electrical parameters. It is attributed to hot carrier injection in the space
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f1af9bff8ff3cb71b9783c03ec749fc
https://doi.org/10.1109/asdam.2016.7805912
https://doi.org/10.1109/asdam.2016.7805912
Autor:
Martin Donoval, Patrik Pribytny, Juraj Marek, Daniel Donoval, Ales Chvala, Lubica Stuchlikova, Martin Jagelka
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
In this paper we present the results from repetitive Unclmped Inductive Switching — UIS measurements on power GaN HEMTs. Experimental analysis was performed on two types of power devices — normally ON and OFF HEMTs. UIS test was used to simulate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::800b81e95ccdc1f63c2406be009c8c1d