Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Martin J. Prest"'
Publikováno v:
IEEE Transactions on Electron Devices. 70:3136-3139
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3176d38fc0aadaa997be510377c2d61a
https://doi.org/10.1109/ted.2023.3266711
https://doi.org/10.1109/ted.2023.3266711
Autor:
Konstantin D. Stefanov, Martin J. Prest, Mark Downing, Elizabeth George, Naidu Bezawada, Andrew D. Holland
Publikováno v:
Sensors, Vol 20, Iss 7, p 2031 (2020)
A single-photon CMOS image sensor (CIS) design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and th
Externí odkaz:
https://doaj.org/article/65148168b4a84a70bd47e87ed0cac07a
Autor:
Martin J. Prest, Konstantin D. Stefanov, Naidu Bezawada, Elizabeth George, Mark Downing, Andrew D. Holland
Publikováno v:
Sensors, Vol 20, Iss 2031, p 2031 (2020)
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 7
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 7
A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times and the resu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2dfb664b1b5031a0eedbfe5d6ca9818
https://www.mdpi.com/1424-8220/20/7/2031
https://www.mdpi.com/1424-8220/20/7/2031
Publikováno v:
Science and Technology of Advanced Materials, Vol 13, Iss 5, p 055002 (2012)
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives
Externí odkaz:
https://doaj.org/article/0ae005c56edf40ec9a460dedeb0e2b44
Autor:
Vishal A. Shah, Maksym Myronov, Chalermwat Wongwanitwatana, Richard J H Morris, Martin J Prest, James Richardson-Bullock, Evan Parker, Terry Whall, David Leadley
Publikováno v:
ECS Meeting Abstracts. :3194-3194
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40638a61fd232adf5f9eb2f0b4ce79a3
https://doi.org/10.1149/ma2012-02/43/3194
https://doi.org/10.1149/ma2012-02/43/3194
Autor:
Jorge García-Cañadas, Shudan Cheng, Lourdes Márquez-García, Martin J Prest, Ahmad Akbari-Rahimabadi, Gao Min
Publikováno v:
Measurement Science & Technology; Oct2016, Vol. 10 Issue 60, p1-1, 1p
Autor:
Setälä, Olli E., Prest, Martin J., Stefanov, Konstantin D., Jordan, Douglas, Soman, Matthew R., Vähänissi, Ville, Savin, Hele
Publikováno v:
Small; 11/22/2023, Vol. 19 Issue 47, p1-8, 8p
Publikováno v:
AIP Conference Proceedings; 2017, Vol. 1881 Issue 1, p1-7, 7p, 1 Color Photograph, 3 Charts, 3 Graphs
Autor:
Stefanov, Konstantin D.1 (AUTHOR) Konstantin.Stefanov@open.ac.uk, Prest, Martin J.1 (AUTHOR) Andrew.Holland@open.ac.uk, Downing, Mark2 (AUTHOR) mdowning@eso.org, George, Elizabeth2 (AUTHOR) egeorge@eso.org, Bezawada, Naidu2 (AUTHOR) Naidu.Bezawada@eso.org, Holland, Andrew D.1 (AUTHOR)
Publikováno v:
Sensors (14248220). Apr2020, Vol. 20 Issue 7, p2031. 1p.
Autor:
Hassan, A. H. A., Mironov, O. A., Dobbie, A., Morris, J. H., Halpin, J. E., Shah, V. A., Myronov, M., Leadley, D. R., Gabani, S., Feher, A., Cizmar, E., Andrievskii, V. V., Berkutov, I. B.
Publikováno v:
2013 IEEE XXXIII International Scientific Conference Electronics & Nanotechnology (ELNANO); 2013, p51-55, 5p