Coupling Electronic Holography and Finite-Element Method Simulations to Measure Electric Fields in Nanocapacitors

Autor: Kilian Gruel, Raphaël Serra, Leifeng Zhang, Aurélien Masseboeuf, Martin J Hÿtch, Christophe Gatel

Publikováno v: Microscopy and Microanalysis. 28:2278-2280

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fba52aa25f2e374ff7fdfc1c7659946d
https://doi.org/10.1017/s1431927622008753

Structure Determination of Clusters Formed in Ultra-Low Energy High-Dose Implanted Silicon

Autor: N. Cherkashin, Martin J. Hÿtch, Fuccio Cristiano, A. Claverie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::498bc7fee068cc9e7df60f4c918f9d18
https://doi.org/10.4028/3-908451-13-2.303

Off-axis electron holography of magnetic nanowires and chains, rings, and planar arrays of magnetic nanoparticles

Autor: Rafal E, Dunin-Borkowski, Takeshi, Kasama, Alexander, Wei, Steven L, Tripp, Martin J, Hÿtch, Etienne, Snoeck, Richard J, Harrison, Andrew, Putnis

Publikováno v: Microscopy research and technique. 64(5-6)

A selection of recent results illustrating the application of off-axis electron holography to the study of magnetic microstructure in closely-spaced nanoparticles and nanowires is reviewed. Examples are taken from the characterization of FeNi nanopar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::f518ad6f7d8f04a9411de060f7a3070c
https://pubmed.ncbi.nlm.nih.gov/15549694

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

Autor: Daniele Barettin, Matthias Auf der Maur, Aldo di Carlo, Alessandro Pecchia, Andrei F Tsatsulnikov, Alexei V Sakharov, Wsevolod V Lundin, Andrei E Nikolaev, Sergey O Usov, Nikolay Cherkashin, Martin J Hÿtch, Sergey Yu Karpov

Publikováno v: Nanotechnology; 1/6/2017, Vol. 28 Issue 1, p1-1, 1p

Strains induced during FDSOI transistors manufacturing : a study by dark-field electron holography

Autor: Victor Boureau

Publikováno v: Victor Boureau
Physique [physics]. Université de Toulouse III-Paul Sabatier, 2016. Français. ⟨NNT : ⟩
Physique [physics]. Université de Toulouse III-Paul Sabatier, 2016. Français

After being considered harmful for a long time, stress became one of the principal means to improve metal-oxide-semiconductor (MOS) device performance. Indeed, the generated strains significantly increase carrier mobility in silicon. Within this cont

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::464aafb1403809041d3c5d485f30fe32
http://thesesups.ups-tlse.fr/3252/