Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Martin Hundhausen"'
Publikováno v:
DMW - Deutsche Medizinische Wochenschrift. 147:112-118
ZusammenfassungAufgrund der Diskussion über gesundheitliche Folgen von Schallemissionen und Infraschall von Windenergieanlagen, fassen wir hier im Rahmen eines narrativen Reviews die Studienlage zusammen und stellen die physikalischen Fakten vor. In
Akademický článek
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Publikováno v:
Deutsche medizinische Wochenschrift (1946). 147(3)
Based on the recent discussion about health impacts of wind turbine noise and infrasound emissions, we present the physical facts and summarize related studies in a narrative review. We are exposed to infrasound emissions from different sources, wher
Publikováno v:
Materials Science Forum. :1166-1169
Raman spectroscopy is commonly applied for studying the properties of epitaxial graphene on silicon carbide (SiC). In principle, the Raman intensity of a single graphene layer is rather low compared to the signal of SiC. In this work we follow an app
Autor:
Heiko B. Weber, Michel Bockstedte, Michael Krieger, Martin Hundhausen, Gerhard Pensl, Hiroyuki Nagasawa, Martin Hauck, Felix Fromm, Svetlana Beljakowa
Publikováno v:
Materials Science Forum. :265-268
Persistent conductivity in n-type 3C-SiC is investigated in a wide temperature range down to 3 K by Hall effect, admittance spectroscopy, low temperature photoluminescence (LTPL) and Raman spectroscopy. We propose a model, which clearly explains the
Autor:
Michael Seidling, Jonas Heimerl, Philipp Weber, Constanze Sturm, Robert Zimmermann, Norbert Schönenberger, Peyman Yousefi, Timo Eckstein, Takuya Higuchi, Johannes Illmer, Martin Hundhausen, Philip Dienstbier, Jürgen Ristein, Timo Paschen, Ang Li, Christian Heide, Anna Mittelbach, Stefan Meier, Roy Shiloh, Alexander Tafel, Joshua McNeur, Martin Kozák, Peter Hommelhoff
Publikováno v:
EPJ Web of Conferences, Vol 205, p 08009 (2019)
New ways of controlling quasi-free and free electrons by means of phase-controlled ultrashort laser pulses are demonstrated: from strong-field physics in the conducting 2-d material graphene and at the surface of nanostructures, to laser acceleration
Autor:
Felix Fromm, Florian Speck, Markus Ostler, Thomas Seyller, Hendrik Vita, Martin Hundhausen, Roland J. Koch, Karsten Horn
Publikováno v:
Materials Science Forum. :649-652
Epitaxial graphene (EG) grown on SiC(0001) resides on the so-called buffer layer. This carbon rich (6√3×6√3)R30° reconstruction is covalently bound to the topmost silicon atoms of the SiC. Decoupling the graphene buffer layer from the SiC inter
Autor:
Jonas Röhrl, Martin Hundhausen, Johannes Jobst, Florian Speck, Heiko B. Weber, Lothar Ley, Daniel Waldmann, Thomas Seyller, Markus Ostler
Publikováno v:
Materials Science Forum. :629-632
We report on a comprehensive study of the properties of quasi-freestanding monolayer and bilayer graphene produced by conversion of the (6√3×6√3)R30° reconstruction into graphene via intercalation of hydrogen. The conversion is confirmed by pho
Publikováno v:
Materials Science Forum. :603-606
The phonon frequencies of epitaxial graphene on silicon carbide (SiC) depend on mechanical strain and charge transfer from the substrate to the epitaxial layer. Strain and doping depend on the preparation process and on the number of graphene layers.
Autor:
Florian Speck, Konstantin V. Emtsev, Markus Ostler, Lothar Ley, Martin Hundhausen, Jonas Röhrl, Thomas Seyller
Publikováno v:
physica status solidi c. 7:398-401
Epitaxial graphene (EG) grown by solid-state decomposition of SiC is a promising material for future graphenebased electronics. On EG, the fabrication of a field-effect device requires the deposition of suitable gate insulator. Atomic layer depositio