Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Martin Hoyas, A."'
Publikováno v:
In Microelectronic Engineering 2006 83(11):2068-2071
Publikováno v:
In Microelectronic Engineering October 2004 76(1-4):32-37
Autor:
Martin Hoyas, A., Schuhmacher, J., Whelan, C. M., Fernandez Landaluce, T., Vanhaeren, D., Maex, K., Celis, J. P.
Publikováno v:
Journal of Applied Physics; 12/1/2006, Vol. 100 Issue 11, p114903, 6p, 1 Diagram, 4 Graphs
Autor:
Martin Hoyas, A., Travaly, Y., Schuhmacher, J., Sajavaara, T., Whelan, C. M., Eyckens, B., Richard, O., Giangrandi, S., Brijs, B., Vandervorst, W., Maex, K., Celis, J. P., Jonas, A. M., Vantomme, A.
Publikováno v:
Journal of Applied Physics; 3/15/2006, Vol. 99 Issue 6, p063515, 8p, 2 Black and White Photographs, 1 Diagram, 3 Charts, 5 Graphs
Autor:
Jamila El Beghdadi, Saïd Bouzakraoui, Julie Leroy, Nicolas Boucher, Pierre-Olivier Mouthuy, Roberto Lazzaroni, Jérôme Cornil, Alain M. Jonas, Yoann Olivier, Yves Geerts, Ana Martin-Hoyas, Bernard Nysten, Dana Alina Serban, Sorin Melinte, Alexandru Vlad, Sergey Sergeev, Michele Sferrazza, Patrick Brocorens, Cédric Burhin, Vincent Lemaur
Publikováno v:
The Journal of Physical Chemistry C. 114:4617-4627
We present a joint experimental and theoretical study of the structural and charge-transport properties of a liquid-crystalline alpha,omega-disubstituted oligothiophene derivative for application ill organic field-effect transistors. The structural p
Publikováno v:
Microelectronic Engineering. 83:2068-2071
The growth of tungsten nitride carbide, WN"xC"y, films obtained by atomic layer deposition (ALD), using tri-ethylboron, tungsten hexafluoride and ammonia precursors is determined by the density and type of substrate reactive sites. During an initial
Autor:
Chao Zhao, Youssef Travaly, Annemie Van Ammel, Ana Martin Hoyas, Marc Schaekers, Annelies Delabie
Publikováno v:
ECS Transactions. 1:3-13
The integration of ALD films in MOS devices can reveal interactions between the substrate and the ALD process, or the impact of subsequent process steps on the ALD film. This is studied on three different films: for front-end applications hafnium oxi
Autor:
Youssef Travaly, V. Sutcliffe, T. Abell, M. Van Hove, Karen Maex, A. Martin Hoyas, J. Schuhmacher, Alain M. Jonas
Publikováno v:
Microelectronic Engineering. 82:639-644
Interfaces play a crucial role in determining the ultimate properties of nanoscale structures. However, the characterization of such structures is difficult, as the interface can no longer be defined as the separation between two materials. The high
Autor:
Lemaur, Vincent, Bouzakraoui, Saïd, Olivier, Yoann, Brocorens, Patrick, Burhin, Cédric, El Beghdadi, Jamila, Martin-Hoyas, Ana, Jonas, Alain M., Serban, Dana Alina, Vlad, Alexandru, Boucher, Nicolas, Leroy, Julie, Sferrazza, Michele, Mouthuy, Pierre-Olivier, Melinte, Sorin, Sergeev, Sergey, Geerts, Yves, Lazzaroni, Roberto, Cornil, Jérôme, Nysten, Bernard
Publikováno v:
The Journal of Physical Chemistry - Part C; 20240101, Issue: Preprints
Publikováno v:
Microelectronic Engineering. 76:32-37
The promising low-k property of polymers is offset by the ease of penetration of their inherently porous internal matrix during processing. In this study, plasma chemistry is applied to seal a low-k polymer against penetration of adventitious species