New horizons for the synthesis of nanoparticles: Germanium nanoparticles from metastable GeBr-solutions

Autor: Andreas Schnepf, Frank Schreiber, Dominik Naglav-Hansen, Martin Hodas, Viktoriia Slynchuk

Publikováno v: Main Group Metal Chemistry, Vol 44, Iss 1, Pp 243-249 (2021)

We present the synthesis and characterization of halide-terminated colloidal Ge nanoparticles of 2–10 nm with a narrow size distribution, synthesized via a novel reaction route. The nanoparticles are prepared by the disproportionation reaction of m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df3ab64d7bb62956a49dec897f50a7c3
https://doaj.org/article/0d6ded60d843445684b8d4048f92e691

Polymorphism and structure formation in copper phthalocyanine thin films

Autor: Takuya Hosokai, Clemens Zeiser, Alexander Gerlach, Linus Pithan, Berthold Reisz, Alexander Hinderhofer, Giuliano Duva, Martin Hodas, Jakub Hagara, Frank Schreiber, Valentina Belova, Peter Siffalovic

Publikováno v: 'Journal of Applied Crystallography ', vol: 54, pages: 203-210 (2021)
Journal of Applied Crystallography

This X-ray diffraction study proves that two α polymorphs of copper pthalocyanine (CuPc) co-exist in vacuum-deposited thin films and provides possible molecular configurations by excluded-volume considerations. Furthermore, atomic force microscopy i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b70b62167616cae6f22ec63182f53285
https://doi.org/10.1107/s1600576720015472

Structure of Thin Films of [6] and [7]Phenacene and Impact of Potassium Deposition

Autor: Jan Hagenlocher, Peter Siffalovic, Matthias Zwadlo, Alexander Gerlach, Alexander Hinderhofer, Ivan A. Zaluzhnyy, Martin Hodas, Giuliano Duva, Jakub Hagara, Frank Schreiber

Publikováno v: 'Advanced Optical Materials ', vol: 9, pages: 2002193-1-2002193-9 (2021)
Advanced optical materials 202193, 1-9 (2021). doi:10.1002/adom.202002193

Advanced optical materials 202193, 1-9 (2021). doi:10.1002/adom.202002193
Organic semiconductors offer a flexibility in band gap tuning through different molecular lengths and have shown to be promising candidates for high-per-formance electroni

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7723fb7f148c8830fa844d32664c790

Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffraction

Autor: Martin Hodas, Mathias K. Huss-Hansen, Bjarke B. E. Jensen, Luciana Tavares, Jakub Hagara, Arne Lützen, Frank Schreiber, Jakob Kjelstrup-Hansen, Matti Knaapila, Eva Majkova, Andreas Osadnik, Peter Siffalovic, Nada Mrkyvkova

Publikováno v: Huss-Hansen, M K, Hodas, M, Mrkyvkova, N, Hagara, J, Jensen, B B E, Osadnik, A, Lützen, A, Majková, E, Siffalovic, P, Schreiber, F, Tavares, L, Kjelstrup-Hansen, J & Knaapila, M 2020, ' Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffraction ', Langmuir, vol. 36, no. 8, pp. 1898-1906 . https://doi.org/10.1021/acs.langmuir.9b03467
Huss-Hansen, M, Hodas, M, Mrkyvkova, N, Hagara, J, Jensen, B B E, Osadnik, A, Lützen, A, Majková, E, Siffalovic, P, Schreiber, F, Tavares, L, Kjelstrup-Hansen, J & Knaapila, M 2020, ' Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by In Situ X-ray Diffraction ', Langmuir, vol. 36, no. 8, pp. 1898-1906 . https://doi.org/10.1021/acs.langmuir.9b03467

We report on the microstructure, morphology, and growth of 5,5′-bis(naphth-2-yl)-2,2′-bithiophene (NaT2) thin films deposited on graphene, characterized by grazing incidence X-ray diffraction (GIXRD) and complemented by atomic force microscopy (A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4598b03c45d19ed02b3488f4b751751
https://pubmed.ncbi.nlm.nih.gov/32027509

Novel highly substituted thiophene-based n-type organic semiconductor: structural study, optical anisotropy and molecular control

Autor: Lena Merten, Jakub Hagara, Frank Schreiber, Stephan V. Roth, Martin Hulman, Lucia Feriancová, Mathias K. Huss-Hansen, Martin Putala, Alexander Hinderhofer, Vojtech Nádaždy, Peter Nádaždy, Alina Vlad, Nadine Russegger, Peter Siffalovic, Pallavi Pandit, Jan Hagenlocher, M. Sojková, Eva Majkova, Nada Mrkyvkova, Ashin Shaji, Matti Knaapila, Martin Hodas, Matej Jergel, Matthias Zwadlo

Publikováno v: Hagara, J, Mrkyvkova, N, Feriancová, L, Putala, M, Nádaždy, P, Hodas, M, Shaji, A, Nádaždy, V, Huss-Hansen, M K, Knaapila, M, Hagenlocher, J, Russegger, N, Zwadlo, M, Merten, L, Sojková, M, Hulman, M, Vlad, A, Pandit, P, Roth, S, Jergel, M, Majková, E, Hinderhofer, A, Siffalovic, P & Schreiber, F 2020, ' Novel highly substituted thiophene-based n-type organic semiconductor : structural study, optical anisotropy and molecular control ', CrystEngComm, vol. 22, no. 42, pp. 7095-7103 . https://doi.org/10.1039/d0ce01171a

Oligothiophenes and their functionalized derivatives have been shown to be a viable option for high-performance organic electronic devices. The functionalization of oligothiophene-based materials allows further tailoring of their properties for speci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e38c966c383b6a90e4b0751e8bbfbe6
https://orbit.dtu.dk/en/publications/c82be3ee-50bb-473f-b31a-6590bccd588d