Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Martin Hetzl"'
Autor:
Theresa Hoffmann, Verena Zuerbig, Martin Stutzmann, Jonathan J. Finley, Martin Hetzl, Christoph E. Nebel, Kai Müller, Max Kraut, Jakob Wierzbowski
Publikováno v:
Nano Letters. 18:3651-3660
Solid-state quantum emitters embedded in a semiconductor crystal environment are potentially scalable platforms for quantum optical networks operated at room temperature. Prominent representatives are nitrogen-vacancy (NV) centers in diamond showing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd227871b8a5ae6199a5fc52ce95d036
https://doi.org/10.1021/acs.nanolett.8b00763
https://doi.org/10.1021/acs.nanolett.8b00763
Publikováno v:
Nano Letters. 17:3582-3590
Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6eed59ab8ea976cc883b9a30ab0b0ead
https://doi.org/10.1021/acs.nanolett.7b00741
https://doi.org/10.1021/acs.nanolett.7b00741
Autor:
Julia Winnerl, Luca Francaviglia, Martin Hetzl, Martin Stutzmann, Max Kraut, Sonja Matich, Anna Fontcuberta i Morral, Markus Döblinger
Publikováno v:
Nanoscale. 9:7179-7188
The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c128c8c60ffeab386cf4ffd5e6ff32ae
https://doi.org/10.1039/c7nr00802c
https://doi.org/10.1039/c7nr00802c
Autor:
Felix Eckmann, Martin Stutzmann, Florian Pantle, Ian D. Sharp, Julia Winnerl, Martin Hetzl, Max Kraut
Publikováno v:
Nanoscale. 11(16)
Nanowire (NW) based devices for solar driven artificial photosynthesis have gained increasing interest in recent years due to the intrinsically high surface to volume ratio and the excellent achievable crystal qualities. However, catalytically active
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75c1e7377f09afd49659066e7df39fb9
https://pubmed.ncbi.nlm.nih.gov/30968077
https://pubmed.ncbi.nlm.nih.gov/30968077
Publikováno v:
Materials Science in Semiconductor Processing. 55:32-45
The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fb64b62f3877887bb82dca1f573ba0
https://doi.org/10.1016/j.mssp.2016.09.026
https://doi.org/10.1016/j.mssp.2016.09.026
Publikováno v:
Materials Science in Semiconductor Processing. 48:65-78
The current research of GaN nanowires on diamond substrates is reviewed and extended by recent results. Both the self-assembled and the selective area growth mechanisms using plasma-assisted molecular beam epitaxy are summarized. Structural and optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2a16e3dae8a6f147df79f64da1626b
https://doi.org/10.1016/j.mssp.2016.03.013
https://doi.org/10.1016/j.mssp.2016.03.013
Autor:
Ian D. Sharp, Martin Hetzl, Martin Stutzmann, Sijie Hao, Viktoria F. Kunzelmann, Qinglin Sai, Changtai Xia, Sonja Matich
Publikováno v:
Applied Physics Letters. 116:092102
Room temperature sub-gap optical absorption spectra measured by photothermal deflection spectroscopy were investigated for hetero- and homo-epitaxial β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy as well as for a bulk crystal. The a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d502e3edb412da1aa75f847d8b8ca83
https://doi.org/10.1063/1.5143393
https://doi.org/10.1063/1.5143393
Publikováno v:
Gallium Nitride Materials and Devices XIII.
Coaxial core-shell nanowire heterostructures can consist of different materials with varying lattice parameters, electronic band energetics, opposite doping types, and also of different crystal structures. Based on this high degree of freedom, core-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f6f7d58c17266a54d550bd63bb6054
https://doi.org/10.1117/12.2292640
https://doi.org/10.1117/12.2292640
Publikováno v:
npj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-8 (2017)
Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have emerged as promising materials for electronic, optoelectronic, and valleytronic applications. Recent work suggests drastic changes of the band gap and exciton binding energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b02910685a5703b7110583831aea7f40
http://arxiv.org/abs/1708.00250
http://arxiv.org/abs/1708.00250
Different deposition parameters, for the growth of (111)-oriented single crystalline diamond samples were varied, such as temperature, methane concentration, methane/oxygen ratio and chamber pressure. It was shown that good quality material can be de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59bff19ca6f895da7d436b25e53c055a
https://publica.fraunhofer.de/handle/publica/247387
https://publica.fraunhofer.de/handle/publica/247387