Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Martin Glodde"'
Autor:
William M. J. Green, Eric J. Zhang, Jason S. Orcutt, Elizabeth A. Duch, Nathan P. Marchack, Laurent Schares, Yves Martin, Chi Xiong, Martin Glodde, Tymon Barwicz
Publikováno v:
Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XX.
We present a fully integrated photonic chip spectrometer for near-infrared tunable diode laser absorption spectroscopy of methane (CH4). The integrated photonic sensor incorporates a heterogeneously integrated III-V laser/detector chip coupled to a s
Autor:
V. Dolores-Calzadilla, Swetha Kamlapurkar, Laurent Schares, A. Sigmund, Yves Martin, Martin Moehrle, Chi Xiong, Jason S. Orcutt, Martin Glodde, Tymon Barwicz, Eric J. Zhang, William M. J. Green
Publikováno v:
Proceedings-IEEE 69th Electronic Components and Technology Conference, ECTC 2019, 1060-1066
STARTPAGE=1060;ENDPAGE=1066;TITLE=Proceedings-IEEE 69th Electronic Components and Technology Conference, ECTC 2019
STARTPAGE=1060;ENDPAGE=1066;TITLE=Proceedings-IEEE 69th Electronic Components and Technology Conference, ECTC 2019
We demonstrate flip-chip solder assembly of InP chips on Silicon-Photonic (Si-Ph) substrates aimed at high volume manufacturing using typical microelectronic lead-free solders. In our show-case application, an InP die is both a light source and a det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e20d6481c09ec3baadae89cb4cdc4e6b
http://www.scopus.com/inward/record.url?scp=85072301644&partnerID=8YFLogxK
http://www.scopus.com/inward/record.url?scp=85072301644&partnerID=8YFLogxK
Autor:
William M. J. Green, Martin Glodde, Chu C. Teng, Laurent Schares, Eric J. Zhang, Tymon Barwicz, Chi Xiong, Yves Martin, Gerard Wysocki, Jason S. Orcutt
Publikováno v:
Silicon Photonics XIV.
We present a chip-scale spectroscopic methane sensor, incorporating a tunable laser, sensor waveguides, and methane reference cell, assembled as a compact silicon photonic integrated circuit. The sensor incorporates an InP-based semiconductor optical
Autor:
Eric J. Zhang, Yves Martin, Jason S. Orcutt, Chi Xiong, Martin Glodde, Tymon Barwicz, Laurent Schares, Elizabeth A. Duch, Nathan Marchack, Chu C. Teng, Gerard Wysocki, William M. J. Green
Publikováno v:
Conference on Lasers and Electro-Optics.
Autor:
Yves Martin, Chu C. Teng, Laurent Schares, Nathan P. Marchack, Eric J. Zhang, Jason S. Orcutt, Elizabeth A. Duch, Gerard Wysocki, Sebastian Engelmann, Tymon Barwicz, Martin Glodde, Chi Xiong, Swetha Kamlapurkar, Russell Wilson, Nigel Hinds, Tom Picunko, William M. J. Green
Publikováno v:
OFC
We present a photonic chip sensor platform for near-infrared laser absorption spectroscopy, which incorporates an uncooled III-V laser and detector, on-chip methane reference cell, and 30cm-long evanescent field waveguides, integrated on a silicon ph
Autor:
Kafai Lai, Nelson Felix, Andrew Metz, David Hetzer, Jing Guo, Martin Glodde, Daniel Corliss, Jing Sha, Chi-Chun Liu, Yasuyuki Ido, Makoto Muramatsu, Richard A. Farrell, Cheng Chi, Yann Mignot
Publikováno v:
Novel Patterning Technologies 2018.
The progress of using DSA for metal cut to achieve sub-20nm tip-to-tip (t2t) critical dimension (CD) is reported. Small and uniform t2t CD is very challenging due to lithographic limitation but holds the key to backend-of-the-line (BEOL) scaling. An
Autor:
Martin Glodde, Robert L. Bruce, Marinus Hopstaken, Karen Petrillo, Michael R. Saccomanno, Nelson Felix, B. Price
Publikováno v:
SPIE Proceedings.
Successful pattern transfer from the photoresist into the substrate depends on robust layers of lithographic films. Typically, an alternating sequence of inorganic (most often Si containing) and organic hardmask (HM) materials is used. Pattern transf
Autor:
Krystelle Lionti, Teddie Magbitang, Martin Glodde, Anuja De Silva, Dario L. Goldfarb, Nelson Felix, Indira Sheshadri
Publikováno v:
SPIE Proceedings.
High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardm
Publikováno v:
SPIE Proceedings.
EUV photoacid generation efficiency has been described primarily in terms of the EUV photon absorption by the PAG or the resist matrix and the production of low energy photoelectrons, which are reported as being ultimately responsible for the high qu
Publikováno v:
Journal of Photopolymer Science and Technology. 23:173-184
We are introducing a new family of fluorine-free photoacid generators (PAGs) for use in 193 nm lithography. These PAGs are based on percyano-substituted cyclopentadienide anions and do not contain sulfonate groups. PAGs with these weakly coordinating