Complications in silane-assisted GaN nanowire growth

Autor: Nian Jiang, Saptarsi Ghosh, Martin Frentrup, Simon M. Fairclough, Kagiso Loeto, Gunnar Kusch, Rachel A. Oliver, Hannah J. Joyce

Understanding the growth mechanisms of III-nitride nanowires is of great importance to realise their full potential. We present a systematic study of silane-assisted GaN nanowire growth on c-sapphire substrates by investigating the surface evolution

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::076ee22a90fe6c17aab0be345ec2f382
https://www.repository.cam.ac.uk/handle/1810/349848

Ni/Au contacts to corundum α-Ga2O3

Autor: Fabien C.-P. Massabuau, Francesca Adams, David Nicol, John C. Jarman, Martin Frentrup, Joseph W. Roberts, Thomas J. O’Hanlon, Andras Kovács, Paul R. Chalker, R. A. Oliver

The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a856508c2358c30ae556580d49c380
https://www.repository.cam.ac.uk/handle/1810/347363

X-ray characterisation of the basal stacking fault densities of (112̄2) GaN

Autor: Colin J. Humphreys, Martin Frentrup, Markus Pristovsek, Tongtong Zhu, Gunnar Kusch

Publikováno v: CrystEngComm. 23:6059-6069

The diffuse scattering from basal plane stacking faults (BSF) of (112) GaN layers was observed by laboratory X-ray diffraction (XRD) systems. To observe the diffuse scattering, the (112) GaN samples were oriented in the [20] zone for 10l and 20l seri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a538425a4a6ef79c066313aa8b04633b
https://doi.org/10.1039/d1ce00627d

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

Autor: Rachel A. Oliver, Stephen Church, Rachel Barrett, George Christian, Menno J. Kappers, David J. Binks, Simon Hammersley, Martin Frentrup

Publikováno v: Church, S, Christian, G, Barrett, R, Hammersley, S, Kappers, M J, Frentrup, M, Oliver, R A & Binks, D 2021, ' Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells ', Journal of Physics D Applied Physics . https://doi.org/10.1088/1361-6463/ac22d3

A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of the GaN capping layer was varied b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0353f69f6bf00606ba66cd5934b20c1
https://www.repository.cam.ac.uk/handle/1810/327851

Photoluminescence efficiency of zincblende InGaN/GaN quantum wells

Autor: Boning Ding, M. Quinn, Stephen Church, Martin Frentrup, David J. Binks, K. Cooley-Greene, Rachel A. Oliver, Abhiram Gundimeda, David J. Wallis, Menno J. Kappers

Publikováno v: Church, S, Quinn, M, Cooley-Greene, K, Ding, B, Gundimeda, A, Kappers, M J, Frentrup, M, Wallis, D, Binks, D & Oliver, R A 2021, ' Photoluminescence efficiency of zincblende InGaN/GaN quantum wells ', Journal of Applied Physics, vol. 129, 175702 . https://doi.org/10.1063/5.0046649

Growing green and amber emitting InGaN/GaN quantum wells in the zincblende, rather than the wurtzite,crystal phase has the potential to improve efficiency. However, optimisation of the emission efficiency of theseheterostructures is still required to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::458222627d3a8acb37d0cee29e2d19a4
https://www.repository.cam.ac.uk/handle/1810/322173