Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Martin F. Sarott"'
Autor:
Roman M. Wyss, Günter Kewes, Pietro Marabotti, Stefan M. Koepfli, Karl-Philipp Schlichting, Markus Parzefall, Eric Bonvin, Martin F. Sarott, Morgan Trassin, Maximilian Oezkent, Chen-Hsun Lu, Kevin-P. Gradwohl, Thomas Perrault, Lala Habibova, Giorgia Marcelli, Marcela Giraldo, Jan Vermant, Lukas Novotny, Martin Frimmer, Mads C. Weber, Sebastian Heeg
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Raman spectroscopy enables the non-destructive characterization of chemical composition, crystallinity, defects, or strain in countless materials. However, the Raman response of surfaces or thin films is often weak and obscured by dominant b
Externí odkaz:
https://doaj.org/article/f552e9180d2c4b819528bb9b65a64ade
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Setting any polarization value in ferroelectric thin films is a key step for their implementation in neuromorphic devices. Here, the authors demonstrate continuous modulation of the remanent polarization at the nanoscale in PbZr0.52Ti0.48O3 films.
Externí odkaz:
https://doaj.org/article/148190f937e640faa65f7c6c4a8217be
Autor:
Binbin Chen, Nicolas Gauquelin, Nives Strkalj, Sizhao Huang, Ufuk Halisdemir, Minh Duc Nguyen, Daen Jannis, Martin F. Sarott, Felix Eltes, Stefan Abel, Matjaž Spreitzer, Manfred Fiebig, Morgan Trassin, Jean Fompeyrine, Johan Verbeeck, Mark Huijben, Guus Rijnders, Gertjan Koster
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Integrating multifunctional oxides on silicon is highly desirable. Here, the authors present asymmetric BaTiO3 superlattices on silicon exhibiting enhanced out-of-plane polarization by harnessing the interfacial strain and broken inversion symmetry.
Externí odkaz:
https://doaj.org/article/c7d710e563254ea8acdebe44644b8b8d
Publikováno v:
Materials, Vol 14, Iss 16, p 4749 (2021)
Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelec
Externí odkaz:
https://doaj.org/article/053a783ce22f4ff495ea3032dd302356
Publikováno v:
Advanced Functional Materials, 33 (28)
The integration of thin-film ferroelectrics with reliable properties into oxide electronics requires accomplishing deterministic polarization states. Since ferroelectricity emerges during thin-film synthesis already, it is essential to elucidate how
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3e201e46e302fa1dd71dcd65afa55c3
Publikováno v:
Nature Physics, 19 (5)
The ability to sensitively image electric fields is important for understanding many nanoelectronic phenomena, including charge accumulation at surfaces and interfaces and field distributions in active electronic devices. A particularly exciting appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea8ba2286e0af481b0f76c210964d59a
http://arxiv.org/abs/2212.07909
http://arxiv.org/abs/2212.07909
Publikováno v:
Applied Physics Letters, 119 (11)
Superconductivity serves as a unique solid-state platform for electron interference at a device-relevant lengthscale, which is essential for quantum information and sensing technologies. As opposed to semiconducting transistors that are operated by v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05995bbfc37339113f0b42ee0ad1b9c2
Publikováno v:
Journal of Physics: Condensed Matter, 33 (29)
In ferroelectric thin films, the polarization state and the domain configuration define the macroscopic ferroelectric properties such as the switching dynamics. Engineering of the ferroelectric domain configuration during synthesis is in permanent ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ee2e3a60a16210d38100ea5ef13ede8
https://doi.org/10.3929/ethz-b-000479735
https://doi.org/10.3929/ethz-b-000479735
Autor:
Thomas Weber, Martin F. Sarott, Nives Strkalj, Morgan Trassin, Marco Bernet, Manfred Fiebig, Jakob Schaab
Publikováno v:
Journal of Applied Physics, 129 (17)
We investigate in-plane ferroelectricity in an epitaxial ferroelectric|dielectric PbTiO3|SrTiO3 (PTO|STO) superlattice under tensile strain. Using a combination of x-ray diffraction and piezoresponse force microscopy, we identify a strain-induced per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0576e14ebc01be93fd734d7d8bc6d9c6
https://doi.org/10.3929/ethz-b-000482764
https://doi.org/10.3929/ethz-b-000482764
Publikováno v:
Materials, Vol 14, Iss 4749, p 4749 (2021)
Materials
Materials, 14 (S 16)
Materials; Volume 14; Issue 16; Pages: 4749
Materials
Materials, 14 (S 16)
Materials; Volume 14; Issue 16; Pages: 4749
Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baeb333214aacbaa9214475a27fbd966
https://doi.org/10.3390/ma14164749
https://doi.org/10.3390/ma14164749