Growth mechanisms of GaN microrods for 3D core-shell LEDs: The influence of silane flow

Autor: Andreas Waag, Jana Hartmann, Winfried Daum, Tilman Schimpke, Henning Schuhmann, Xue Wang, Markus Bähr, Wanja Dziony, Michael Seibt, Martin Dr. Straßburg, Johannes Ledig, Matin Sadat Mohajerani, Hergo-Heinrich Wehmann, Lorenzo Caccamo, G. Lilienkamp

Publikováno v: physica status solidi (a). 212:2830-2836

The three dimensional growth of GaN structures as a basis for the fabrication of 3D GaN core-shell LEDs has attracted substantial attention in the past years. GaN nanorods or microrods with high aspect ratios can be grown by selective area epitaxy on

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8778cf7d18948a3c4fd032484fd315e2
https://doi.org/10.1002/pssa.201532316

The MOVPE growth mechanism of catalyst-free self-organized GaN columns in H2 and N2 carrier gases

Autor: Andreas Waag, Johannes Ledig, Martin Dr. Straßburg, Xue Wang, Hergo-H. Wehmann, Uwe Jahn, Martin Mandl

Publikováno v: Journal of Crystal Growth. 384:61-65

Columnar structures of III–V semiconductors recently attract considerable attention because of their potential applications in novel optoelectronic and electronic devices. In the present study, the mechanisms for the growth of catalyst-free self-or

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::608d0cb826d3e4f074ad5e89add82305
https://doi.org/10.1016/j.jcrysgro.2013.09.015

The nanorod approach: GaN NanoLEDs for solid state lighting

Autor: Werner Bergbauer, Henning Riechert, Stephan Merzsch, Jiandong Wei, Johannes Ledig, Richard Neumann, Andreas Waag, Uwe Jahn, Sönke Fündling, Martin Dr. Straßburg, Mohamed Al Suleiman, Shunfeng Li, Hergo H. Wehmann, Milena Erenburg, Xue Wang, Achim Trampert

Publikováno v: physica status solidi (c)

Vertically aligned GaN nanorods have recently obtained substantial interest as a new approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs are expected to offer substantial advantageous: very low defect density, qua

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cfe80bbaccf5efa331c7de067738239

Defect generation by nitrogen during pulsed sputter deposition of GaN

Autor: Frederik Steib, T. Remmele, Hergo-Heinrich Wehmann, Andreas Waag, Hans-Jürgen Lugauer, Alexander Behres, Martin Dr. Straßburg, Martin Albrecht, Sönke Fündling, Jan Gülink

Publikováno v: Journal of Applied Physics 124, 175701 (2018)--J. Appl. Phys.--J. of Appl. Phys.--http://aip.scitation.org/journal/jap--http://aip.scitation.org/journal/jap--https://ieeexplore.ieee.org/servlet/opac?punumber=4939926--http://www.bibliothek.uni-regensburg.de/ezeit/?1476463--1089-7550--1089-7550

Pulsed sputter deposition has been demonstrated to be a viable process for the growth of high quality GaN and InGaN/GaN LEDs. It enables the fabrication of nitride LEDs with a red emission wavelength at large areas. In this study, we explore details

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa65a2b1863126f306e24cb7f5ae5ab1
https://doi.org/10.1063/1.5037340

Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

Autor: Sergey Yu. Karpov, Gordon Callsen, Markus R. Wagner, Felix Nippert, Bastian Galler, Thomas Kure, Martin Dr. Straßburg, Axel Hoffmann, Christian Nenstiel, Hans-Jürgen Lugauer

Publikováno v: Applied Physics Letters. 109:161103

We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8048e395f6d8b60f7716235ffe962a1
https://doi.org/10.1063/1.4965298