Investigation of Current Collapse Mechanism on AlGaN/GaN Power Diodes

Autor: Martin Doublet, Nicolas Defrance, Etienne Okada, Loris Pace, Thierry Duquesne, Bouyssou Emilien, Arnaud Yvon, Nadir Idir, Jean-Claude De Jaeger

Publikováno v: Electronics; Volume 12; Issue 9; Pages: 2007
Electronics
Electronics, 2023, 12 (9), pp.2007. ⟨10.3390/electronics12092007⟩

International audience; In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04121270e8b921a41a51eaf4dbcde4e6
https://doi.org/10.3390/electronics12092007