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pro vyhledávání: '"Martin C. Steele"'
The Institute for Amorphous Studies was founded in 1982 as the international center for the investigation of amorphous mate rials. It has since played an important role in promoting the und er standing of disordered matter in general. An Institut
Autor:
Martin C. Steele
Publikováno v:
Physical Review. 88:451-464
Autor:
Martin C. Steele, Takeo Hattori
Publikováno v:
Journal of the Physical Society of Japan. 18:1294-1301
High current experiments on a single crystal bismuth sample at 77°K have shown strong self-magnetoresistance effects, including evidence for self-pinching of the intrinsic electron-hole plasma in that material. From the interpretation of the self-ma
Autor:
Breulmann, Franziska Lioba1,2 (AUTHOR), Hatt, Luan Phelipe1,3 (AUTHOR), Schmitz, Boris4,5 (AUTHOR), Wehrle, Esther1,3 (AUTHOR), Richards, Robert Geoff1,6 (AUTHOR), Della Bella, Elena1 (AUTHOR), Stoddart, Martin James1,6 (AUTHOR) martin.stoddart@aofoundation.org
Publikováno v:
Clinical & Translational Medicine. Jan2023, Vol. 13 Issue 1, p1-34. 34p.
Publikováno v:
Physical Properties of Amorphous Materials ISBN: 9781489922625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30251ff848b8ef0556042d0c8cf62773
https://doi.org/10.1007/978-1-4899-2260-1_1
https://doi.org/10.1007/978-1-4899-2260-1_1
Publikováno v:
Physical Properties of Amorphous Materials
One: General Properties.- Chemistry and Physics of Covalent Amorphous Semiconductors.- Fundamentals of Amorphous Materials.- Two: Structure.- The Constraint of Discord.- Structural Studies of Amorphous Materials.- EXAFS of Disordered Systems.- Moessb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68aa89891f682630af10f8b261f50b57
https://doi.org/10.1007/978-1-4899-2260-1
https://doi.org/10.1007/978-1-4899-2260-1
Publikováno v:
eLife; 4/9/2024, p1-31, 31p
Autor:
Martin C. Steele, Bernard A. MacIver
Publikováno v:
Applied Physics Letters. 28:687-688
The barrier height of a Pd‐CdS Schottky diode is reported to decrease markedly when exposed to hydrogen. This effect is believed to be due to the decrease in Pd work function. It makes a good simple hydrogen detector (even at 298 °K) over the rang
Publikováno v:
Journal of Applied Physics. 47:2537-2538
The C‐V characteristics of palladium gate MOS capacitors change significantly when exposed to an air ambient containing up to 4% hydrogen. From these experiments, it is concluded that these changes are due to the lowering of the palladium work func
Autor:
Martin C. Steele
Publikováno v:
Materials Research Bulletin. 21:374