Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Martin A. van den Brink"'
Autor:
Jos de Klerk, Hans Butler, Jan van Schoot, Richard A. George, Gerard de Zwart, Jan Baselmans, Martin A. van den Brink, Danu Satriasaputra
Publikováno v:
Scopus-Elsevier
To meet the high productivity standards, set by current top- end stepper systems, the use of excimer laser sources and high scanning speeds are essential. This paper reports on a new Step & Scan system capable of exposing 26 X 33 mm fields, using a 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9f71c3a5f21d9ff678d0621abbaa848
https://doi.org/10.1117/12.276002
https://doi.org/10.1117/12.276002
Publikováno v:
SPIE Proceedings.
While the semiconductor manufacturing community is preparing for the transition from 0.35micrometers to 0.25micrometers technology, lithography equipment suppliers are preparing for the shift from step-and-repeat to step-and-scan systems. In addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c50150d5258c4237df80561f3b50f9
https://doi.org/10.1117/12.240936
https://doi.org/10.1117/12.240936
Publikováno v:
SPIE Proceedings.
Lithographic equipment for processes with 0.35 micrometers design rules is becoming available. One of the critical questions is which imaging technology will be used to define the required small feature size. Another question, frequently underestimat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802268cc52238fb40cb916769c19f615
https://doi.org/10.1117/12.148937
https://doi.org/10.1117/12.148937
Publikováno v:
SPIE Proceedings.
Steppers suitable for resolutions down to 0.35 micrometers are now available for the development and production of 64 mb DRAMs. At these small feature sizes, the depth of focus approaches one micron and the machine to machine overlay requirements are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de1199efce84331e35925f71f18967af
https://doi.org/10.1117/12.59803
https://doi.org/10.1117/12.59803
Autor:
Steve D. Slonaker, Douglas R. Ritchie, Barton A. Katz, James S. Greeneich, Richard Rogoff, Stefan Wittekoek, Martin A. van den Brink, Paul Frank Luehrmann
Publikováno v:
SPIE Proceedings.
Many lithographic approaches to achieving 0.35 micron IC design rules have been proposed. Several years ago, the primary candidate was x-ray lithography. Today it is generally acknowledged that an optical approach will be used for such design rules.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4a76a02de5c11157fe312e90f1116f
https://doi.org/10.1117/12.130363
https://doi.org/10.1117/12.130363
Publikováno v:
SPIE Proceedings.
i-line wafer steppers are evolving as established production tools, and it is evident that they will be used to realize features in the sub-half-micron region. Consequently, i-line steppers can be expected to be the equipment of choice for volume pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35203374a6214ec5ab22fa0aa88c7a54
https://doi.org/10.1117/12.44826
https://doi.org/10.1117/12.44826
Publikováno v:
SPIE Proceedings.
This paper introduces a new wafer stepper on-line calibration sensor, the Image Sensor, which refers directly to the aerial reticle image at the exposure wavelength. This sensor system is integrated with other stepper metrology systems by a so-called
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356e3eef07e00f4cccf3ce3066c98bbe
https://doi.org/10.1117/12.20056
https://doi.org/10.1117/12.20056
Autor:
J. W.D. Martens, Judon M. D. Stoeldraijer, Stefan Wittekoek, H. F. D. Linders, Douglas R. Ritchie, Martin A. van den Brink
Publikováno v:
Optical/Laser Microlithography III.
A new excimer laser stepper at 248 nm wavelength Is described wilti an all quartz 5x reduction lens with NA 0. 42 and 21 . 2 mm field size. Design aspects and experimental data are reported. A key feature of the system is a ilL alignment system with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc974492f47bfa3bc059b26f11542c2d
https://doi.org/10.1117/12.20207
https://doi.org/10.1117/12.20207
Publikováno v:
Microelectronic Engineering. 9:53-58
Submicron optical lithography is achieved with an advanced 5X I-line wafer stepper. Production design rules to 0.7 microns are achieved by combining very good optical performance with large depth of focus and overlay to better than 0.15 microns. By u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8313dd6bcb5003e0557a2b92293b9870
https://doi.org/10.1016/0167-9317(89)90012-9
https://doi.org/10.1016/0167-9317(89)90012-9
Publikováno v:
SPIE Proceedings.
I-line lithography offers the capability to achieve half-micron integrated circuit design rules. Such design rules require very good optical performance matched to resist process technology. Overlay performance at these design rules is also critical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b3f9318b839f8e052399a08f5740861
https://doi.org/10.1117/12.953147
https://doi.org/10.1117/12.953147