Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Martin A. Giles"'
Publikováno v:
IEEE Transactions on Electron Devices. 66:19-27
In this paper, we will focus on the problem of modeling global or die-to-die variation in semiconductor devices. We will demonstrate that the process corner-based approach for modeling global variation, which has been the dominant approach for design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bdd3cb8f24bbb96aec6654b10907f8b
https://doi.org/10.1109/ted.2018.2860929
https://doi.org/10.1109/ted.2018.2860929
Autor:
P. Fleischmann, Patrick H. Keys, M. Stettler, A. Kaushik, Harold W. Kennel, Cory E. Weber, Martin D. Giles, S. S. Botelho, A. Grigoriev, A. D. Lilak, S. Cea, Anurag Chaudhry, N. Voynich, N. Zhavoronok, B. Voinov, Mehandru Rishabh
Publikováno v:
Journal of Computational Electronics. 13:18-32
Front end process simulation is an invaluable tool in assessing current and future process options. This review describes the application of process simulation in modeling geometry, doping and stress effects in advanced logic processes. Continuum and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8c2d78509aabe22f3cd860f521dd39
https://doi.org/10.1007/s10825-013-0491-6
https://doi.org/10.1007/s10825-013-0491-6
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
With continued scaling of CMOS technology, numerous concerns have been raised about random telegraph noise (RTN) possibly matching or exceeding the random process variation in threshold voltage (V th )[1], [2]. These studies are usually limited by th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e69181b81ee9eb46ae26ae48ff9ae72a
https://doi.org/10.1109/vlsit.2016.7573424
https://doi.org/10.1109/vlsit.2016.7573424
Autor:
Cory E. Weber, Martin D. Giles, M. Stettler, Roza Kotlyar, Lucian Shifren, Thomas D. Linton, S. Cea
Publikováno v:
Journal of Computational Electronics. 8:110-123
We review our novel simulation approach to model the effects of applied stress and wafer orientation by mapping detailed dependencies of long channel physics onto short channel device conditions in Silicon NMOS and PMOS. We use kp and Monte Carlo met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e6ae2002669d0bcc1d0882932aa77b9
https://doi.org/10.1007/s10825-009-0288-9
https://doi.org/10.1007/s10825-009-0288-9
Publikováno v:
Journal of Computational Electronics. 7:95-98
We have developed a novel simulation approach to model electron mobility in the inversion layer which encompasses all the important effects of arbitrary wafer and applied stress orientations, such as carrier re-population, band warping, and scatterin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e9051e8b7972bd4d35d198c850954d0
https://doi.org/10.1007/s10825-007-0162-6
https://doi.org/10.1007/s10825-007-0162-6
Autor:
Helen E. Jones, Robert Ian Nicholson, Iain Robert Hutcheson, Julia Margaret Wendy Gee, Kathryn Mary Taylor, Stephen Edward Hiscox, Martin Gwyn Giles
Publikováno v:
Reviews in Endocrine and Metabolic Disorders. 8:241-253
Growth factors provide powerful mitogenic and survival signals to breast cancer cells and it is therefore not surprising that they are able to subvert inhibitory responses to anti-hormonal drugs. In this review we discuss several mechanisms by which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac0dd44d25a6ba6ca913538a3820c968
https://doi.org/10.1007/s11154-007-9033-5
https://doi.org/10.1007/s11154-007-9033-5
Autor:
D. Becher, P. Newman, A. Kornfeld, N. Arkali Radhakrishna, Sanjay Natarajan, S. Mudanai, K. Maurice, Paul A. Packan, Martin D. Giles, Titash Rakshit
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
Random variation of threshold voltage (Vt) in MOSFETs plays a central role in determining the minimum operating voltage of products in a given process technology. Properly characterizing Vt variation requires a large volume of measurements of minimum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cfe1d28e4af356b878cced49684ca26
https://doi.org/10.1109/vlsit.2015.7223657
https://doi.org/10.1109/vlsit.2015.7223657
Autor:
Xiaoling Wang, Patrick H. Keys, Reaz Shaheed, Obradovic Borna J, Kaizad Mistry, Stephen M. Cea, Roza Kotlyar, Cory E. Weber, Martin D. Giles, Tahir Ghani, Lucian Shifren, Sunit Tyagi, M. Stettler, Philippe Matagne
Publikováno v:
ECS Transactions. 3:429-438
Due to the success of using strain for performance gain in advanced logic technologies, strain engineering has become an important part of advanced transistor design. This paper presents process and device models that are used to provide understandin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b7a9cb037ad5275ea0e285fd6dfb807
https://doi.org/10.1149/1.2355840
https://doi.org/10.1149/1.2355840
Autor:
Lucian Shifren, Everett X. Wang, M. Stettler, Philippe Matagne, B. Obradovic, Martin D. Giles, S. Cea, Roza Kotlyar
Publikováno v:
IEEE Transactions on Electron Devices. 53:1840-1851
A comprehensive quantum anisotropic transport model for holes was used to study silicon PMOS inversion layer transport under arbitrary stress. The anisotropic band structures of bulk silicon and silicon under field confinement as a twodimensional qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a6e792a1679ab5a0151fd5b7d307a30
https://doi.org/10.1109/ted.2006.877370
https://doi.org/10.1109/ted.2006.877370
Autor:
M. Stettler, Jun He, Philippe Matagne, Everett X. Wang, Martin D. Giles, B. Obradovic, Lucian Shifren
Publikováno v:
Journal of Computational Electronics. 3:161-164
A new, computationally efficient model for silicon hole mobility under stress is presented. The model predicts the modulation of hole mobility by stress under arbitrary stress conditions, channel orientations, and fields. The model uses a simplified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bb1d563d7e47d1eaf8c50ad32309ef
https://doi.org/10.1007/s10825-004-7037-x
https://doi.org/10.1007/s10825-004-7037-x