Zobrazeno 1 - 10
of 127
pro vyhledávání: '"Martin, Hulman"'
Autor:
Adriana Annušová, Martina Labudová, Daniel Truchan, Veronika Hegedűšová, Helena Švajdlenková, Matej Mičušík, Mário Kotlár, Lenka Pribusová Slušná, Martin Hulman, Farnoush Salehtash, Anna Kálosi, Lucia Csáderová, Eliška Švastová, Peter Šiffalovič, Matej Jergel, Silvia Pastoreková, Eva Majková
Publikováno v:
ACS Omega, Vol 8, Iss 47, Pp 44497-44513 (2023)
Externí odkaz:
https://doaj.org/article/d1372fcc0f26408aba73dcdeae6d5ad1
Autor:
Lenka Pribusová Slušná, Tatiana Vojteková, Jana Hrdá, Helena Pálková, Peter Siffalovic, Michaela Sojková, Karol Végsö, Peter Hutár, Edmund Dobročka, Marián Varga, Martin Hulman
Publikováno v:
ACS Omega, Vol 6, Iss 51, Pp 35398-35403 (2021)
Externí odkaz:
https://doaj.org/article/6caf879851b04231a6f0f243e1f9d4ec
Autor:
Toma Susi, Viera Skákalová, Andreas Mittelberger, Peter Kotrusz, Martin Hulman, Timothy J. Pennycook, Clemens Mangler, Jani Kotakoski, Jannik C. Meyer
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC). Here,
Externí odkaz:
https://doaj.org/article/990480ab4b76433893fac41c7042b320
Autor:
Uri R. Gabinet, Changyeon Lee, Na Kyung Kim, Martin Hulman, Sarah M. Thompson, Cherie R. Kagan, Chinedum O. Osuji
Publikováno v:
The Journal of Physical Chemistry Letters. 13:7994-8001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd93351e280d14cbe7a034a4d8678da
https://doi.org/10.1021/acs.jpclett.2c01819
https://doi.org/10.1021/acs.jpclett.2c01819
Autor:
Andrii Kozak, Monika Hofbauerová, Yuriy Halahovets, Lenka Pribusová-Slušná, Marián Precner, Matej Mičušík, L’ubomír Orovčík, Martin Hulman, Anastasiia Stepura, Mária Omastová, Peter Šiffalovič, Milan Ťapajna
Publikováno v:
ACS Applied Materials & Interfaces. 14:36815-36824
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d302fdbd26f2290243da707e58ec9a9c
https://doi.org/10.1021/acsami.2c08963
https://doi.org/10.1021/acsami.2c08963
Autor:
Andrii Kozak, Michaela Sojkova, Filip Gucmann, Michal Bodík, Karol Végso, Edmund Dobrocka, Igor Píš, Federica Bondino, Martin Hulman, Peter Šiffalovič, Milan Ťapajna
Publikováno v:
Applied Surface Science
Two-dimensional (2D) transition metal dichalcogenides are potential candidates for ultrathin solid-state lubricants in low-dimensional systems owing to their flatness, high in-plane mechanical strength, and low shear interlayer strength. Yet, the eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ffc6333b001970ef9d3e86d230eae86
http://arxiv.org/abs/2209.09128
http://arxiv.org/abs/2209.09128
Autor:
Eva Majkova, Matej Jergel, Martin Hulman, Peter Nadazdy, Michal Bodík, Peter Siffalovic, Karol Vegso, Peter Hutár, Frank Schreiber, Lenka Pribusová Slušná, Martin Hodas, Jana Hrdá, Sigrid Bernstorff, M. Sojková, Ashin Shaji
Publikováno v:
The Journal of Physical Chemistry C. 125:9461-9468
Some of the distinct optical, catalytical, and electronic properties of few-layer MoS2 films arise from a specific orientation of the MoS2 layers. The growth of horizontally or vertically aligned M...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7873f8894554e9d3d37cb3704a15b119
https://doi.org/10.1021/acs.jpcc.1c01716
https://doi.org/10.1021/acs.jpcc.1c01716
Autor:
Nada Mrkyvkova, Alois Nebojsa, Eva Majkova, Martin Hulman, Matej Jergel, Zdenek Futera, Adam Dubroka, Peter Siffalovic, Adrian Cernescu, Frank Schreiber, M. Sojková
Publikováno v:
The Journal of Physical Chemistry C. 125:9229-9235
The development of defect analysis for inorganic semiconductors in the past century paved the way for the success story of today’s electronics. By analogy, defect analysis plays a critical role in ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48f558a62383cfdd99d184c8596ee1ef
https://doi.org/10.1021/acs.jpcc.1c00059
https://doi.org/10.1021/acs.jpcc.1c00059
Autor:
Federica Bondino, Lenka Pribusová Slušná, Jana Hrdá, Martin Hulman, Tatiana Vojteková, M. Sojková, Edmund Dobročka, Igor Píš, Valéria Tašková
Publikováno v:
RSC Advances. 11:27292-27297
Recently, few-layer PtSe2 films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::097ee43b8b3dc372747d09d5c88bf1bc
https://doi.org/10.1039/d1ra04507e
https://doi.org/10.1039/d1ra04507e
Autor:
Peter Nadazdy, Ashin Shaji, Eva Majkova, Lenka Pribusová Slušná, Peter Hutár, Ivan Kundrata, Peter Siffalovic, M. Sojková, Martin Hulman, Karol Vegso
Publikováno v:
The Journal of Physical Chemistry C. 124:19362-19367
The crystallographic alignment of an ultra-thin MoS2 film strongly influences its properties and is, therefore, substantial for various applications. Developing the methods for controlled growth is...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c8994f9361ae6820564bd5ffd44d958
https://doi.org/10.1021/acs.jpcc.0c05336
https://doi.org/10.1021/acs.jpcc.0c05336