Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Martijn van Noordenburg"'
Autor:
Alberto Pirati, Joerg Mallmann, Uwe Stamm, Rudy Peeters, Martijn van Noordenburg, Daniel Smith, Sjoerd Lok, Eric Verhoeven, Hans Meiling, Herman Boom, Christian Wagner, Jan-Willem van der Horst, Geert Fisser, Michael Purvis, Igor V. Fomenkov, Arthur Winfried Eduardus Minnaert, Jo Finders, Carmen Zoldesi, Roderik van Es, Judon Stoeldraijer, David C. Brandt, Daniel Brown, Henk Meijer
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VII
NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, whi
Autor:
Christian Wagner, Jo Finders, Milos Popadic, Sjoerd Lok, Koen de Peuter, Arthur Winfried Eduardus Minnaert, Rudy Peeters, Nigel R. Farrar, Chris de Ruijter, Roderik van Es, Alexander Schafgans, Daniel J. W. Brown, Ron Kool, Noreen Harned, Herman Boom, Eelco van Setten, Jörg Mallmann, Martin Lin, Martijn van Noordenburg, Daniel Smith, Frank Y. S. Chuang, Alberto Pirati, Roger Huang, Marcel Beckers, Judon Stoeldraijer, David C. Brandt, Carmen Zoldesi, Hans Meiling
Publikováno v:
SPIE Proceedings.
Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm
Autor:
Rudy Peeters, Joerg Mallman, Noreen Harned, Guido Schiffelers, Judon Stoeldraijer, David C. Brandt, Martijn van Noordenburg, Peter Kuerz, Herman Boom, Hans Meiling, Igor V. Fomenkov, Nigel Farrar, Alberto Pirati, Ron Kool, Sjoerd Lok, Eelco van Setten, Martin Lowisch
Publikováno v:
SPIE Proceedings.
The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML’s third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV exper