Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Martijn Sebastiaan Duraij"'
Autor:
Tiberiu-Gabriel Zsurzsan, Michael A. E. Andersen, Zhe Zhang, Martijn Sebastiaan Duraij, Yudi Xiao
Publikováno v:
IEEE Transactions on Power Electronics. 37:14831-14849
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b5d5edca376d216b905d9b2b6e918b
https://doi.org/10.1109/tpel.2022.3148192
https://doi.org/10.1109/tpel.2022.3148192
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 18:168-176
Compact power electronic circuits and higher operating temperatures of switching devices call for an analysis and verification on the impact of the parasitic components in these devices. The found drift mechanisms in a gallium-nitride field effect tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32c725029e89d1aed356b359a9463aea
https://doi.org/10.4071/imaps.1545724
https://doi.org/10.4071/imaps.1545724
Publikováno v:
Duraij, M S, Xiao, Y, Zsurzsan, T G & Zhang, Z 2021, A Comparative Study on Class AB and Class D Amplifier Topologies for High Temperature Power Line Communication Circuits . in Proceedings of 2021 IEEE International Symposium on Power Line Communications and its Applications . IEEE, 2021 IEEE International Symposium on Power Line Communications and its Applications, Aachen, North Rhine-Westphalia, Germany, 26/10/2021 . https://doi.org/10.1109/ISPLC52837.2021.9628537
Power line communication (PLC) is widely used in the well intervention industry to control tools performing maintenance on oil and gas well pipes. This paper compares PLC driver power amplifiers and the impact of temperature towards them. As both a C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::920fed836d35fe610bc9d9457cd7c0c6
https://doi.org/10.1109/isplc52837.2021.9628537
https://doi.org/10.1109/isplc52837.2021.9628537
Publikováno v:
Duraij, M S, Xiao, Y, Zsurzsan, G & Zang, Z 2021, ' Enhancement Mode GaN-FETs in Extreme Temperature Conditions, Part II: Dynamic Parasitic Parameters ', Additional Conferences (device Packaging, Hitec, Hiten, and Cicmt), vol. 2021, no. HiTEC, pp. 000053-000057 . https://doi.org/10.4071/2380-4491.2021.HiTEC.000053
Parasitic components in eGaN-FETs impact the dynamic performance of switching stages. The capacitances seen, primarily on the output characteristics, of these devices are a main contributor towards switching losses and therefor converter efficiency.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e074c9cd47cf573a03172fd07491877
https://orbit.dtu.dk/en/publications/9c55db35-0db2-4e91-ac9a-40e920e49a28
https://orbit.dtu.dk/en/publications/9c55db35-0db2-4e91-ac9a-40e920e49a28
Publikováno v:
Duraij, M S, Xiao, Y, Zsurzsan, T G & Zhang, Z 2021, Switching Performance in a GaN Power Stage at Extreme Temperature Conditions . in Proceedings of 8 th IEEE Workshop on Wide Bandgap Power Devices and Applications . IEEE, pp. 135-139, 8 th IEEE Workshop on Wide Bandgap Power Devices and Applications, 07/11/2021 . https://doi.org/10.1109/WiPDA49284.2021.9645117
Exposure to an extreme ambient temperature leads to increased losses in a Gallium Nitride Field Effect Transistor (GaN-FET) when operating in a switch-mode power stage. The output capacitance of Gallium Nitride (GaN) devices is decreased at higher vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb68fce53919737cfa15ddf0a0a29cc0
https://orbit.dtu.dk/en/publications/66ef14bb-fcec-4661-b7dd-33e10c11bb73
https://orbit.dtu.dk/en/publications/66ef14bb-fcec-4661-b7dd-33e10c11bb73
Autor:
Simon Ravyts, Wieland Van De Sande, Giel Van den Broeck, Johan Driesen, Martijn Sebastiaan Duraij, Mauricio Dalla Vecchia, Michael Daenen, Wilmar Martinez
Publikováno v:
Ravyts, S, Van De Sande, W, Vecchia, M D, Van Den Broeck, G, Duraij, M S, Martinez, W, Daenen, M & Driesen, J 2020, ' Practical considerations for designing reliable DC/DC converters, applied to a BIPV case ', Energies, vol. 13, no. 4, pp. 834 . https://doi.org/10.3390/en13040834
Energies; Volume 13; Issue 4; Pages: 834
Energies, Vol 13, Iss 4, p 834 (2020)
Article
Energies; Volume 13; Issue 4; Pages: 834
Energies, Vol 13, Iss 4, p 834 (2020)
Article
State-of-the-art reliability assessment typically starts from a given circuit topology, for which the most suitable components are selected using a Physics of Failure analysis. This paper, however, addresses the topology selection stage, which is the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cdb93bfc7cc0adfe4199b7f68d6778b
https://doi.org/10.3390/en13040834
https://doi.org/10.3390/en13040834