Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Martijn Lenes"'
Autor:
Sukhvinder Singh, Patrick Choulat, Jonathan Govaerts, Arvid van der Heide, Valérie Depauw, Filip Duerinckx, Ronald Naber, Martijn Lenes, Marten Renes, Loic Tous, Jef Poortmans
Publikováno v:
Progress in Photovoltaics: Research and Applications. 30:899-909
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fff1649c1e9a55d7132e11ea5acff6
https://doi.org/10.1002/pip.3548
https://doi.org/10.1002/pip.3548
Autor:
R.C.G. Naber, Jef Poortmans, Maria Recaman Payo, Martijn Lenes, Patrick Choulat, Filip Duerinckx, Loic Tous, Sukhvinder Singh
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
The current work is aimed at the development of the building blocks for the integration of polysilicon-based passivating contacts in co-plated n-PERT front junction solar cells. We show that both n-type poly and p-type poly layers (called n-poly and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a72651327592b5528763e3a97f50e045
https://doi.org/10.1109/pvsc45281.2020.9300834
https://doi.org/10.1109/pvsc45281.2020.9300834
Autor:
Yu Wu, Ingrid G. Romijn, L.J. Geerligs, Martijn Lenes, M.K. Stodolny, Jan-Marc Luchies, Gerard J. M. Janssen
Publikováno v:
Solar Energy Materials and Solar Cells. 158:24-28
We present a high-performance bifacial n-type solar cell with LPCVD n+ polysilicon (polySi) back side passivating contacts and fire-through screen-printed metallization, processed on full area 6″ Cz wafers. The cells were manufactured with low-cost
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26c2116e005a74022d833dda8de5c205
https://doi.org/10.1016/j.solmat.2016.06.034
https://doi.org/10.1016/j.solmat.2016.06.034
Autor:
Jan-Marc Luchies, Meriç Fırat, Jef Poortmans, Filip Duerinckx, Martijn Lenes, Maria Recaman Payo
Passivating contacts consisting of polycrystalline silicon (poly-Si) and thin silicon-oxide (SiOx) layers facilitate a significant reduction of recombination losses in silicon solar cells. Nevertheless, these gains come with short circuit current den
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::416f95c258c7222aacdc511cda87ea85
https://lirias.kuleuven.be/handle/20.500.12942/703575
https://lirias.kuleuven.be/handle/20.500.12942/703575
Publikováno v:
Solar RRL. :2100152
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2dd3600ee72c9629a68465b74607df9
https://doi.org/10.1002/solr.202100152
https://doi.org/10.1002/solr.202100152
Publikováno v:
Energy Procedia. 92:427-433
In this work, we investigate polysilicon passivation contacts, to be used for high performance IBC cells. We demonstrate an LPCVD process for in-situ p-type doped polysilicon. The p-type polysilicon can be locally overcompensated to n-type polysilico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e8502dd552a089fd07baebabb252cf2
https://doi.org/10.1016/j.egypro.2016.07.123
https://doi.org/10.1016/j.egypro.2016.07.123
Publikováno v:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018-A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 10-15 June 2018, 3900-3904
A record low surface recombination current for boron doped $\text{p}^{\mathbf {+}}$poly-Si passivation on random pyramid textured Cz wafers ($\textbf{J}_{\mathbf {o,s}}$ of 10 fA/cm$^{\mathbf {2}}$) has been achieved, with an outlook to even lower $\
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2aced0e08156caa08c340930315e4a4
http://resolver.tudelft.nl/uuid:3f01c74c-f0f2-4568-bbff-fe2c32f76671
http://resolver.tudelft.nl/uuid:3f01c74c-f0f2-4568-bbff-fe2c32f76671
Autor:
M.K. Stodolny, Jochen Löffler, Yu Wu, Martijn Lenes, G.J.M. Janssen, E.H. Ciftpinar, Jurriaan Schmitz, Jan-Marc Luchies, L.J. Geerligs
Publikováno v:
Energy procedia, 124, 851-861. Elsevier
We investigate contacting of n- and p-type polysilicon (polySi) passivating contact layers with industrial screen-printed metal pastes, examining both fire through (FT) and non-fire through (NFT) pastes. The n- and p-type polySi layers, deposited by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6703772c05e2df3e919bcefcafeb033
http://resolver.tudelft.nl/uuid:452da8d0-b2e9-4178-92a8-f4b83b10af4c
http://resolver.tudelft.nl/uuid:452da8d0-b2e9-4178-92a8-f4b83b10af4c
Autor:
M.K. Stodolny, Wilhelmus M. M. Kessels, Rudi Santbergen, Ingrid G. Romijn, G.J.M. Janssen, Olindo Isabella, Martijn Lenes, J. Anker, Bart Geerligs, Bas W. H. van de Loo, Jan Marc Luchies, Jimmy Melskens, Jurriaan Schmitz
Publikováno v:
Energy Procedia, 124, 635-642. Elsevier
Energy procedia, 124, 635-642. Elsevier
Energy Procedia, 124
Energy procedia, 124, 635-642. Elsevier
Energy Procedia, 124
We present a detailed material study of n+-type polysilicon (polySi) and its application as a carrier selective rear contact in a bifacial n-type solar cell comprising fire-through screen-printed metallization and 6" Cz wafers. The cells were manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04e15f56603f8a7f903032c4d2ff8fcd
https://research.tue.nl/nl/publications/1477d728-da1d-45af-b64f-6682fc22e9bd
https://research.tue.nl/nl/publications/1477d728-da1d-45af-b64f-6682fc22e9bd
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 13:1900064
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5603d2440116d7cb884fcb96872535ef
https://doi.org/10.1002/pssr.201900064
https://doi.org/10.1002/pssr.201900064