Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Martha I. Sanchez"'
Autor:
Alan Brodie, Martha I. Sanchez
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Guest Editors Alan Brodie and Martha I. Sanchez introduce the JM3 Special Section on Masks and Lithography in the Era of Multi-beam Mask Writers.
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Background: Stochastic printing failures, manifested as random defects in a patterned photoresist image, result from statistical fluctuations in photon flux and resist components and are a key issue confronting extreme ultraviolet (EUV) lithography.
Autor:
Martha I. Sanchez, Eric M. Panning
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020.
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
A simple physicochemical description of stochastic printing failures is discussed. By combining this with combinatorial calculations of resist imaging chemistry and Monte Carlo analysis, estimates of the rates of random printing failures in nanoscale
Autor:
Eric M. Panning, Martha I. Sanchez
Publikováno v:
Novel Patterning Technologies for Semiconductors, MEMS/NEMS, and MOEMS 2019.
Autor:
Martha I. Sanchez, Wyatt Thornley, Oleg Kostko, Hoa D. Truong, D. Frank Ogletree, Daniel Slaughter, Gregory M. Wallraff, Daniel P. Sanders
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
The looming industry transition towards EUV for high-volume manufacture of semiconductors has demonstrated the need for high sensitivity resists capable of delivering the resolution enhancements offered by the 13.5 nm platform. Inorganic and organome
Autor:
Daniel Slaughter, Frank Ogletree, Oleg Kostko, Hoa D. Truong, Gregory M. Wallraff, Wyatt Thornley, Alexander Friz, Noel Arellno, Martha I. Sanchez
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
As EUV approaches its insertion point into high volume manufacturing the semiconductor industry is increasingly focusing on photoresist performance. Recently metal containing resists have been proposed as alternatives to standard Chemically Amplified
Autor:
Martha I. Sanchez, Eric M. Panning
Publikováno v:
Novel Patterning Technologies 2018.
Publikováno v:
SPIE Proceedings.
Autor:
Daniel Corliss, Martha I. Sanchez, Doni Parnell, Yongan Xu, Chi-Chun Liu, Jing Guo, Lovejeet Singh, Nelson Felix, Yann Mignot, Tsuyoshi Furukawa, David Hetzer, Daniel P. Sanders, Luciana Meli, Sean D. Burns, Kristin Schmidt, Richard A. Farrell, Kafai Lai, John C. Arnold, Cheng Chi, Andrew Metz
Publikováno v:
SPIE Proceedings.
In this study, the integrity and the benefits of the DSA shrink process were verified through a via-chain test structure, which was fabricated by either DSA or baseline litho/etch process for via layer formation while metal layer processes remain the