Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Marta Orrù"'
Autor:
Luciano Cara, Marta Orrù
Publikováno v:
Lo Scalpello - Otodi Educational. 37:20-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e178fc8eb4954caba58ff2bd9233b018
https://doi.org/10.36149/0390-5276-280
https://doi.org/10.36149/0390-5276-280
Autor:
Marta Orrù, Alfonso Franciosi, Yossi Rosenwaks, Alex Henning, Stefano Roddaro, Eva Repiso, Stefania Carapezzi, Silvia Rubini, Anna Cavallini, Faustino Martelli
Publikováno v:
Advanced functional materials (Internet) (2016): 2836–2845. doi:10.1002/adfm.201504853
info:cnr-pdr/source/autori:Orru M.; Repiso E.; Carapezzi S.; Henning A.; Roddaro S.; Franciosi A.; Rosenwaks Y.; Cavallini A.; Martelli F.; Rubini S./titolo:A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy/doi:10.1002%2Fadfm.201504853/rivista:Advanced functional materials (Internet)/anno:2016/pagina_da:2836/pagina_a:2845/intervallo_pagine:2836–2845/volume
info:cnr-pdr/source/autori:Orru M.; Repiso E.; Carapezzi S.; Henning A.; Roddaro S.; Franciosi A.; Rosenwaks Y.; Cavallini A.; Martelli F.; Rubini S./titolo:A Roadmap for Controlled and Efficient n-Type Doping of Self-Assisted GaAs Nanowires Grown by Molecular Beam Epitaxy/doi:10.1002%2Fadfm.201504853/rivista:Advanced functional materials (Internet)/anno:2016/pagina_da:2836/pagina_a:2845/intervallo_pagine:2836–2845/volume
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with carrier densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4825d6a37dc3dc3d3c8cd7733034e557
Wiley Online Library
Wiley Online Library
Publikováno v:
Physical Review Applied 4 (2015). doi:10.1103/PhysRevApplied.4.044010
info:cnr-pdr/source/autori:Orru M.; Piazza V.; Rubini S.; Roddaro S./titolo:Rectification and photoconduction mapping of axial metal-semiconductor interfaces embedded in GaAs nanowires/doi:10.1103%2FPhysRevApplied.4.044010/rivista:Physical Review Applied/anno:2015/pagina_da:/pagina_a:/intervallo_pagine:/volume:4
info:cnr-pdr/source/autori:Orru M.; Piazza V.; Rubini S.; Roddaro S./titolo:Rectification and photoconduction mapping of axial metal-semiconductor interfaces embedded in GaAs nanowires/doi:10.1103%2FPhysRevApplied.4.044010/rivista:Physical Review Applied/anno:2015/pagina_da:/pagina_a:/intervallo_pagine:/volume:4
Semiconductor nanowires have emerged as an important enabling technology and are today used in many advanced device architectures, with an impact both for what concerns fundamental science and in view of future applications. One of the key challenges
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41b2b124c5482249308e092b10394bff
https://doi.org/10.1103/physrevapplied.4.044010
https://doi.org/10.1103/physrevapplied.4.044010
Publikováno v:
Semiconductor science and technology
29 (2014). doi:10.1088/0268-1242/29/5/054001
info:cnr-pdr/source/autori:Orru M.[ 1 ]; Rubini S.[ 1 ]; Roddaro S.[ 1,2,3 ]/titolo:Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing/doi:10.1088%2F0268-1242%2F29%2F5%2F054001/rivista:Semiconductor science and technology (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:29
29 (2014). doi:10.1088/0268-1242/29/5/054001
info:cnr-pdr/source/autori:Orru M.[ 1 ]; Rubini S.[ 1 ]; Roddaro S.[ 1,2,3 ]/titolo:Formation of axial metal-semiconductor junctions in GaAs nanowires by thermal annealing/doi:10.1088%2F0268-1242%2F29%2F5%2F054001/rivista:Semiconductor science and technology (Print)/anno:2014/pagina_da:/pagina_a:/intervallo_pagine:/volume:29
We demonstrate the formation of nanoscale axial Schottky contacts in GaAs nanowires by thermal annealing of NiGeAu multilayers. Energy dispersive x-ray spectroscopy indicates that in specific annealing conditions a sharply-defined Au-rich phase can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9f59bbbf6337cc9eaaebe32e994561f