Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Marta Galicka"'
Publikováno v:
Surface and Interface Analysis. 52:71-75
Autor:
Bogdan J. Kowalski, Ewa Placzek-Popko, S. Chusnutdinow, B.A. Orlowski, Katarzyna Gwóźdź, M.A. Pietrzyk, Elzbieta Guziewicz, Marta Galicka
Publikováno v:
Acta Physica Polonica A. 134:590-595
Autor:
Ryszard Buczko, Perla Kacman, Andrei Varykhalov, Mathias Simma, P. S. Mandal, Oliver Rader, Jaime Sánchez-Barriga, Ondřej Caha, E. Golias, Rafał Rechciński, Marta Galicka, Valentine V. Volobuev, Gerrit E. W. Bauer, Gunther Springholz
Publikováno v:
Advanced Functional Materials. 31:2008885
Structure inversion asymmetry is an inherent feature of quantum confined heterostructures with non equivalent interfaces. It leads to a spin splitting of the electron states and strongly affects the electronic band structure. The effect is particular
Publikováno v:
Nano Letters. 17:531-537
The prediction that Majorana Fermions obey nonabelian exchange statistics can only be tested by interchanging such carriers in "Y'- or 'X'- (or 'K'-) shaped nanowire networks. Here we report the molecular beam epitaxy (MBE) growth of 'K'-shaped InAs
Autor:
Marta Galicka, Hadas Shtrikman, Perla Kacman, Tome M. Schmidt, Ryszard Buczko, Erika Nascimento Lima
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 7:739-753
Autor:
Valentine V, Volobuev, Partha S, Mandal, Marta, Galicka, Ondřej, Caha, Jaime, Sánchez-Barriga, Domenico, Di Sante, Andrei, Varykhalov, Amir, Khiar, Silvia, Picozzi, Günther, Bauer, Perla, Kacman, Ryszard, Buczko, Oliver, Rader, Gunther, Springholz
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(3)
The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:795-798
The properties and the stability of III-V (GaAs, InAs) and IV-VI (PbTe) nanowires are studied by ab initio methods. The calculations show that very thin III-V nanowires are most stable when adopting the wurtzite structure along (0 0 0 1) direction, e
Autor:
M. Bukala, B. Taliashvili, E. Lusakowska, Perla Kacman, Tomasz Story, Piotr Dłużewski, Piotr Dziawa, R. Buczko, Janusz Sadowski, Marta Galicka, Lech T. Baczewski, Viktor Domukhovski, Tomasz Wojciechowski
Publikováno v:
Crystal Growth & Design. 10:109-113
The molecular beam epitaxial growth of PbTe nanowires oil GaAs(111)B substrates is reported. The growth process was based oil the Au-catalyzed vapor-liquid-solid mechanism. These nanowires grow along the [100] axis; they are perpendicular to the subs
Publikováno v:
ResearcherID
The properties of very thin (up to 16 ” diameter) wires, cut out from the bulk in either zinc-blende or wurtzite material, are studied theoretically. In the total energy calculations we use ab initio methods and consider three difierent crystallogr
We envision that quantum spin Hall effect should be observed in $(111)$-oriented thin films of SnSe and SnTe topological crystalline insulators. Using a tight-binding approach supported by first-principles calculations of the band structures we demon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4845013497f493b7c28f4656a675dc2