Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Marshall J. Cohen"'
Autor:
Michael J. Lange, J.J. Sudol, J.C. Dries, P. Dixon, Marshall J. Cohen, A.R. Sugg, Gregory H. Olsen
Publikováno v:
Journal of Crystal Growth. 222:693-696
Low dark current (210 nA/cm2 at −1 V), high shunt resistance area product (0.3 MΩ cm2) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In.53Ga.47As was deposited by organometallic vapor
Publikováno v:
Journal of Electronic Materials. 28:1433-1439
A systematic study of the sealed ampoule diffusion of zinc into epitaxially grown InP, In0.53Ga0.47As, In0.70Ga0.30As, In0.82Ga0.18As, and through the InAsP/InGaAs interface is presented. Diffusion depths were measured using cleave-and-stain techniqu
Autor:
Richard J. Paff, Stephen R. Forrest, Gregory H. Olsen, Marshall J. Cohen, Ray J. Menna, Michael J. Lange, Dong-Su Kim
Publikováno v:
Journal of Applied Physics. 80:6229-6234
Material properties of several lattice‐mismatched InxGa1−xAs/InAsyP1−y (0.66
Autor:
Stephen R. Forrest, Gregory H. Olsen, Marshall J. Cohen, R.J. Menna, D. Z. Garbuzov, D. S. Kim, Michael J. Lange
Publikováno v:
Journal of Electronic Materials. 25:1501-1505
Photoluminescence spectra and efficiency have been measured for several strained InAsyP1−yInxGa1−xAs (0.28 < y ≤ 0.62; 0.66 ≤ x ≤ 0.83) double heterostructures grown by vapor phase epitaxy on InP substrates with graded InAsP buffer layers.
Publikováno v:
Quasi One-Dimensional Conductors I ISBN: 3540092404
We describe an ESR study of pure and irradiated TTF-TCNQ in the low temperature range (1. 2 K − 4. 2 K) where nonlinear transport has been observed. We find no evidence of an activated term in the susceptibility; our results yield an upper limit of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08539845efe1ee2446960fa681d59597
https://doi.org/10.1007/bfb0052808
https://doi.org/10.1007/bfb0052808
Publikováno v:
SPIE Proceedings.
We report on recent results in using InGaAs/InP focal plane arrays for visible light imaging. We have fabricated substrate-removed backside illuminated InGaAs/InP focal plane arrays down to a 10 μm pitch with high quantum efficiency from 0.4 μm thr
Autor:
Marshall J. Cohen, Shi-Che Huang, Matthew T. O'Grady, Michael A. Blessinger, Martin H. Ettenberg, Robert M. Brubaker
Publikováno v:
SPIE Proceedings.
We describe innovations in short wave infrared (SWIR) InGaAs focal plane arrays and cameras which now allow imaging under starlight only conditions at video rates. These lattice matched In.53Ga.47As imagers detect 0.9 μm to 1.7 μm SWIR band light,
Publikováno v:
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
A 32 /spl times/ 32 element InGaAs focal plane array was demonstrated. These arrays may find application in 3-dimensional imaging systems. APD arrays will be advantageous in these systems since the bandwidths required of the readout integrated circui
Autor:
Marshall J. Cohen, Matthew T. O'Grady
Publikováno v:
SPIE Proceedings.
A new dual mode focal plane array integrating both staring and high-speed data reception readout circuits is proposed. This FPA incorporates an indium gallium arsenide PIN photodiode array optimized for high-speed response and a custom CMOS readout i
Publikováno v:
SPIE Proceedings.
We describe a new InGaAs SWIR microcamera developed for robotic and UAV applications. The camera has a volume less than 27 cm3, weighs less than 100 g, and consumes less than 1.4 W. The camera operates with the focal plane array at room temperature a