Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Marsh, P.F"'
Autor:
Hoke, W.E. *, Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Xu, C., Hsieh, K.C.
Publikováno v:
In Journal of Crystal Growth 2003 251(1):827-831
Autor:
Hoke, W.E. *, Kennedy, T.D., Torabi, A., Whelan, C.S., Marsh, P.F., Leoni, R.E., Lardizabal, S.M., Zhang, Y., Jang, J.H., Adesida, I., Xu, C., Hsieh, K.C.
Publikováno v:
In Journal of Crystal Growth 2003 251(1):804-810
Publikováno v:
In Microelectronics Reliability 2002 42(7):997-1002
Publikováno v:
Whelan, C.S. ; Marsh, P.F. ; Lardizabal, S.M. ; Hoke, W.E. ; McTaggart, R.A. ; Kazior, T.E. (2000) Low Noise and Power Metamorphic HEMT Devices and Circuits with X=30% to 60% InxGaAs Channels on GaAs Substrates. In: Gallium Arsenide applications symposium. GAAS 2000, 2-6 october 2000, Paris.
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, and the dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42daafc1adcdcc27a59756fccfc9cc41
http://amsacta.unibo.it/248/
http://amsacta.unibo.it/248/
Akademický článek
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Autor:
Whelan, C.S., Marsh, P.F., Leoni III, R.E., Hoke, W.E., Lardizabal, S.M., Lichwala, S.J., Zhang, Y., Balas, P., Kazior, T.E.
Publikováno v:
International Journal of High Speed Electronics & Systems. Mar2003, Vol. 13 Issue 1, p65. 25p.
Autor:
Whelan, C.S., Marsh, P.F., Leoni, R.E., III, Hunt, J., Grigas, M., Hoke, W.E., Hwang, K.C., Kazior, T.E., Joshi, A.M., Wang, X.
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposiums. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191); 2001, p251-254, 4p
Autor:
Leoni, R.E., III, Lichwala, S.J., Hunt, J.G., Whelan, C.S., Marsh, P.F., Hoke, W.E., Kazior, T.E.
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposiums. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191); 2001, p133-136, 4p
Publikováno v:
2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602); 2001, p191-202, 12p
Autor:
Lubyshev, D., Liu, W.K., Stewart, T., Cornfeld, A.B., Patton, J., Millunchick, J.M., Hoke, W., Marsh, P.F., Meaton, C., Nichols, K., Svensson, S.P.
Publikováno v:
Conference Proceedings 2000 International Conference on Indium Phosphide & Related Materials (Cat. No.00CH37107); 2000, p392-395, 4p