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pro vyhledávání: '"Mars Hy Chen"'
Autor:
Zhiqiang Wei, Guo An Du, Yukio Hayakawa, Hideto Kotani, Takumi Mikawa, Stanley Pl Yeoh, Koichi Kawashima, Jiann Fu Chen, Masayoshi Nakamura, Shinichi Yoneda, Mars Hy Chen, Kazuyuki Kouno, Shunsaku Muraoka, Satoru Ito
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
We have developed 40nm ReRAM for low-power embedded applications. Using resistive switching element process technologies and filament characterization methods to realize good switching characteristics, highly reliable 8M-bit 40nm ReRAM array characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41d478885b41dec877556c9050e4d9a2
https://doi.org/10.1109/imw.2018.8388846
https://doi.org/10.1109/imw.2018.8388846
