Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Marleen Mescher"'
Autor:
Marleen Mescher, Aldo G.M. Brinkman, Duco Bosma, Johan H. Klootwijk, Ernst J.R. Sudhölter, Louis C.P.M. de Smet
Publikováno v:
Sensors, Vol 14, Iss 2, Pp 2350-2361 (2014)
In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl e
Externí odkaz:
https://doaj.org/article/925ab4a337af4139a76c5e1351c12f29
Autor:
Ernst J. R. Sudhölter, Marleen Mescher, L C P M de Smet, Bout Marcelis, Johan Hendrik Klootwijk
Publikováno v:
IEEE Transactions on Electron Devices. 58:1886-1891
This paper presents a method for using nanowire field-effect transistors (NW-FETs) as sensors in aqueous solutions without the need for a reference electrode. A pulsed-gate potential method is used to reduce instabilities related to the dynamics of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a47d01b9cc934e0def75006cf403e155
https://doi.org/10.1109/ted.2011.2142416
https://doi.org/10.1109/ted.2011.2142416
Autor:
Anping Cao, Johan Hendrik Klootwijk, Duco Bosma, Ernst J. R. Sudhölter, Louis C. P. M. de Smet, Marleen Mescher
Publikováno v:
Analytical chemistry. 87(2)
Siloprene-based, ion-selective membranes (ISMs) were drop-casted onto a field-effect transistor device that consisted of a single-chip array of top-down prepared silicon nanowires (SiNWs). Within one array, two sets of SiNWs were covered with ISMs, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c8782f4d8fe49769b2300b89b16477c
https://pubmed.ncbi.nlm.nih.gov/25487713
https://pubmed.ncbi.nlm.nih.gov/25487713
Publikováno v:
Journal of nanoscience and nanotechnology. 13(8)
This paper demonstrates a new method for the top-down production of silicon nanowire field effect transistors for sensing applications. A simple and robust method for the fabrication of these devices is described, using only conventional CMOS (Comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58f2055c45abf1f72ed7ceb18a89774a
https://pubmed.ncbi.nlm.nih.gov/23882811
https://pubmed.ncbi.nlm.nih.gov/23882811
Publikováno v:
Nanowires-Implementations and Applications
The year 2011 marks the 10th anniversary of silicon nanowire (SiNW)-based electronic devices. Since their introduction (Cui & Lieber, 2001) SiNW-based sensor devices have gained considerable interest as a general platform for ultra-sensitive, electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::798674c16b73e5a6ce69d6759b211de2
http://www.intechopen.com/articles/show/title/organic-surface-modification-of-silicon-nanowire-based-sensor-devices
http://www.intechopen.com/articles/show/title/organic-surface-modification-of-silicon-nanowire-based-sensor-devices
Publikováno v:
2010 International Conference on Microelectronic Test Structures (ICMTS).
This paper presents a method for characterizing chemical solutions using nanowire field effect transistors. A pulsed gate potential method is used to prevent instabilities related to the dynamics of ions and other charged species present in the solut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aac4a02a966653205da8750d67c7ed15
https://doi.org/10.1109/icmts.2010.5466863
https://doi.org/10.1109/icmts.2010.5466863