Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Marleen H. van der Veen"'
Autor:
Marleen H. van der Veen, O. Varela Pedreira, N. Jourdan, S. Park, H. Struyf, Zs. Tokei, C. Leal Cerantes, F. Chen, X. Xie, Z. Wu, A. Jansen, J. Machillot, A. Cockburn
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0423bb5f60ac07e32ff7ba94b65c5b8b
https://doi.org/10.1109/iitc52079.2022.9881285
https://doi.org/10.1109/iitc52079.2022.9881285
Autor:
Marleen H. van der Veen, Annelies Delabie, Nancy Heylen, Olalla Varela Pedreira, Nicolas Jourdan, Seongho Park, Herbert Struyf, Zsolt Tokei
Publikováno v:
ECS Meeting Abstracts. :809-809
The dimensional scaling of the back-end of line (BeOL)interconnects is a significant challenge for the deposition and fill of conductive metals in narrow lines and small vias that are needed to connect the semiconductor devices. Especially at the low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b83f39da7bcba6d7790f982b5bb4f52
https://doi.org/10.1149/ma2022-0215809mtgabs
https://doi.org/10.1149/ma2022-0215809mtgabs
Autor:
Naoto Horiguchi, Marleen H. van der Veen, Maryamsadat Hosseini, N. Jourdan, G. T. Martinez, Eugenio Dentoni Litta
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The focus of this paper is on automatic methodology to detect the sidewall voids in narrow trenches filled by Ru. For this purpose, we applied image processing techniques for image recognition and labeling of images obtained by high-angle-annular-dar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff2829166aff0eddd51fb9a2421e12f
https://doi.org/10.1109/iitc51362.2021.9537485
https://doi.org/10.1109/iitc51362.2021.9537485
Autor:
Marleen H. van der Veen, Herbert Struyf, N. Jourdan, S. Lariviere, V. Vega Gonzalez, O. Varela Pedreira, S. Decoster, Lieve Teugels, Christopher J. Wilson, Zs. Tokei, K. Croes, Annelies Delabie, Job Soethoudt
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
Patterns down to 21nm metal pitch (MP) have been used in the hybrid metallization scheme of Ru via prefill followed by a Cu trench metallization. The via resistance for Ru in hybrid with TaNRu/Cu trench fill is benchmarked to Co and Ru dual-damascene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011775f08f8a471b6e9a8ea2ffd7fad6
https://doi.org/10.1109/iitc47697.2020.9515643
https://doi.org/10.1109/iitc47697.2020.9515643
Autor:
Els Kesters, Marleen H. van der Veen, Yuya Akanishi, Frank Holsteyns, Quoc Toan Le, Atsushi Mizutani
Publikováno v:
Solid State Phenomena. 282:263-267
The etching characteristics of ECD cobalt in different cleaning solutions were characterized using four-point probe, spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. 0.05% HF solution with saturated dissolved oxygen concentration was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38802ae6e8739004bb8497af8c4549aa
https://doi.org/10.4028/www.scientific.net/ssp.282.263
https://doi.org/10.4028/www.scientific.net/ssp.282.263
Autor:
Victor M. Blanco Carballo, jimmy chen, Stephane Lariviere, Sara Paolillo, shu-yu lai, Marc Kea, yu-chi Su, Joe Oh, jonathan huang, Gian Lorusso, jim huang, Fu Qiao, Etienne de Poortere, Marleen H. van der Veen, Cyrus E. Tabery, Luke wang
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
In this work we show measurement results on EUV vias through full process integration; after litho (ADI), after etch (AEI) and after CMP polish (API) for a wide range of designs (regular arrays, logic, SRAM, and alignment and overlay mark designs) on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755017763815845fe975434aec9957e2
https://doi.org/10.1117/12.2536943
https://doi.org/10.1117/12.2536943
Autor:
Jean-Philippe Soulie, Christoph Adelmann, Wilfried Vandervorst, Marleen H. van der Veen, Valeria Founta, Zsolt Tokei, Geoffrey Pourtois, Christopher J. Wilson, Anshul Gupta, Ingrid De Wolf, Shreya Kundu, N. Jourdan, Marco Siniscalchi, Ivan Ciofi, Johan Swerts, Ming Mao, Shibesh Dutta, Kiroubanand Sankaran
Publikováno v:
ECS Meeting Abstracts. :1293-1293
In recent technology nodes, interconnect scaling has become a major bottleneck for the reduction of the area of CMOS circuits. In the near future, interconnect dimensions will reach 10 nm and below. Reducing the cross-sectional area of interconnect w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::842e3a35c8bc34979720ffc3b81db110
https://doi.org/10.1149/ma2020-01221293mtgabs
https://doi.org/10.1149/ma2020-01221293mtgabs
Autor:
Herbert Struyf, Kristof Croes, S. Decoster, Ivan Ciofi, N. Heyler, O. Varela Pedreira, V. Vega Gonzalez, Christopher J. Wilson, N. Jourdan, Zs. Tokei, Marleen H. van der Veen
Publikováno v:
2018 IEEE International Interconnect Technology Conference (IITC).
The alternative metals Ru and Co are benchmarked to Cu in a damascene vehicle at scaled dimensions. The Ru and Co nanowires have a higher resistivity but show, when barrierless, a lower increase of the line resistance versus trench cross-sectional ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f387a77393011930cebbd72ccb49794
https://doi.org/10.1109/iitc.2018.8430407
https://doi.org/10.1109/iitc.2018.8430407
Autor:
Basoene Briggs, Zaid El-Mekki, Jürgen Bömmels, Kurt G. Ronse, Stephane Lariviere, Peter De Bisschop, Dan Mocuta, Bogumila Kutrzeba Kotowska, Dieter Van den Heuvel, Joost Bekaert, Danny Wan, Greg McIntyre, Arindam Mallik, Nicolas Jourdan, Ivan Ciofi, Marleen H. van der Veen, Janko Versluijs, Patrick Verdonck, Ming Mao, Christopher J. Wilson, Els Kesters, Stefan Decoster, Victor Blanco, Zsolt Tőkei, Nancy Heylen, Christophe Beral, Eric Hendrickx, Ryoung-han Kim
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX.
The semiconductor scaling roadmap shows the continuous node to node scaling to push Moore’s law down to the next generations. In that context, the foundry N5 node requires 32nm metal pitch interconnects for the advanced logic Back- End of Line (BEo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd3d4f509101ec7209e92967796dc0a
https://doi.org/10.1117/12.2299389
https://doi.org/10.1117/12.2299389
Autor:
Daire J. Cott, Stefan De Gendt, Johannes Vanpaemel, Masahito Sugiura, Philippe M. Vereecken, Inge Asselberghs, Marleen H. van der Veen
Publikováno v:
The Journal of Physical Chemistry C. 119:18293-18302
The gas composition during carbon nanotube (CNT) growth has received much attention because it largely determines the properties of the nanotubes and the yield of the growth. Here, we investigated the influence of hydrogen to hydrocarbon ratio on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab8afb85dcd50a838d775809f2b25541
https://doi.org/10.1021/acs.jpcc.5b04689
https://doi.org/10.1021/acs.jpcc.5b04689