Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Markus Schlapps"'
Autor:
Dieter Weiss, Janusz Sadowski, Werner Wegscheider, Stefan Geissler, Teresa Lermer, Markus Schlapps
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:2676-2680
We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a0e7ed879b57584f964b5cf9ec3fa9
https://doi.org/10.1016/j.physe.2009.12.055
https://doi.org/10.1016/j.physe.2009.12.055
Autor:
Stefan Geissler, Dieter Schuh, Werner Wegscheider, Markus Schlapps, Daniel Neumaier, Janusz Sadowski, Teresa Lermer, Dieter Weiss
We report on magnetotransport measurements of nanoconstricted (Ga,Mn)As devices showing very large resistance changes that can be controlled by both an electric and a magnetic field. Based on the bias voltage and temperature dependent measurements do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf185dcc572c363d47eaf066dad2fc98
Autor:
Janusz Sadowski, Werner Wegscheider, Ursula Wurstbauer, Markus Schlapps, Daniel Neumaier, Matthias Reinwald, Dieter Weiss
Publikováno v:
Physical Review B. 77
We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show that the conductivity decrease foll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f917c5228bdf5a4542408e9bd8e31e
https://doi.org/10.1103/physrevb.77.041306
https://doi.org/10.1103/physrevb.77.041306
Autor:
Dieter Weiss, Konrad Wagner, Werner Wegscheider, Markus Schlapps, Matthias Doeppe, Matthias Reinwald
We investigate magnetoresistance effects for transport across (Ga,Mn)As nanoislands, detached by nanoconstrictions from wider (Ga,Mn)As input leads. As in previous studies a huge magnetoresistance was found for nanoconstrictions in the tunnelling reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::674d49a2da143a33fdcfcb76ffd64af7
Publikováno v:
Applied Physics Letters. 96:052114
Molecular-beam epitaxy grown, 5 nm thick annealed Ga0.95Mn0.05As films demonstrate transition from metallic to insulating state for sheet resistances near resistance quantum, which we connect with the two-dimensional hole localization. Below the meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d83138b12cd9a2c7a839144925d35121
https://doi.org/10.1063/1.3309683
https://doi.org/10.1063/1.3309683
Autor:
Mariusz Ciorga, Stefan Geißler, Andreas Einwanger, Markus Schlapps, Werner Wegscheider, Dieter Weiss, Janusz Sadowski
Publikováno v:
New Journal of Physics. 9:351-351
We discuss the results of our experiments on tunnel devices based on (Ga,Mn)As structures. Those include p+-(Ga, Mn)As/n+-GaAs Esaki diodes and laterally defined narrow nanoconstrictions in (Ga,Mn)As epilayers. We found in those structures strong ani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::566f422b3ca45b095b1e2edfae5804dc
https://doi.org/10.1088/1367-2630/9/9/351
https://doi.org/10.1088/1367-2630/9/9/351