Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Markus Luenenbuerger"'
Autor:
Michael Heuken, Markus Luenenbuerger, Maarten Leys, Adam R. Boyd, Stefan Degroote, Johannes Kaeppeler, Olaf Rockenfeller, Frank Schulte, Marianne Germain
Publikováno v:
physica status solidi c. 6
An AlGaN based high electron mobility transistor (HEMT) structure was grown on 200 mm diameter (111) silicon by metal organic chemical vapour deposition (MOCVD). The growth was initiated by an AlN layer directly on Si. A level wafer temperature profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71e5afbe3776d40bcc25e125015b16bd
https://doi.org/10.1002/pssc.200880925
https://doi.org/10.1002/pssc.200880925
Autor:
J. F. Woitok, Y. Dikme, Michael Heuken, A. V. Danilchyk, Markus Luenenbuerger, V. N. Pavlovskii, Holger Kalisch, A. L. Gurskii, Rolf H. Jansen, E. V. Lutsenko, G. P. Yablonskii, Bernd Schineller, Vitaly Z. Zubialevich
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8f09483727ce89e9943f370c6ce75f
https://doi.org/10.1142/9789812770950_0043
https://doi.org/10.1142/9789812770950_0043
Autor:
Thomas Walther, I.P. Marko, Vitalii Z. Zubialevich, A. L. Gurskii, Markus Luenenbuerger, Harry Protzmann, Holger Kalisch, Evgenii V. Lutsenko, G. P. Yablonskii, Michael Heuken, Bernd Schineller, V. N. Pavlovskii, O. Schoen
Publikováno v:
SPIE Proceedings.
ZnSe/ZnMgSSe and InGaN/GaN heterostructure based lasers under optical transverse pumping by pulsed N 2 -laser radiation were investigated in a wide spectral, temperature and excitation intensity range for various types of heterostructures which diffe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cd009faec2f068c9ca768b01eed3f27
https://doi.org/10.1117/12.475959
https://doi.org/10.1117/12.475959
Autor:
Bernd Schoettker, Harry Protzmann, Markus Luenenbuerger, Bernd Wachtendorf, Michael Heuken, O. Schoen
Publikováno v:
SPIE Proceedings.
The growth conditions for GaN/GaInN MQW structures have been studied in detail on AIX 2000 HT G3 Planetary Reactors. Major process variables, such as precursor supply, growth time and growth temperature have been varied. To describe the dependencies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96e8b91e6c1e79d6c8734bb1c9f97cd0
https://doi.org/10.1117/12.469205
https://doi.org/10.1117/12.469205
Autor:
Y. Dikme, Georg Gerstenbrandt, Markus Luenenbuerger, Holger Kalisch, O. Schoen, Harry Protzmann, Rolf H. Jansen, Michael Heuken, A. Alam
Publikováno v:
SPIE Proceedings.
In this letter a number of latest results from the process development on AIXTRON production scale MOVPE reactors will be reported. Growth of GaN on alternative substrates has been examined. Up to 900 nm crack free GaN layer were deposited on Si usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::591771955f7ee0445dd7eb90b49a31d7
https://doi.org/10.1117/12.511364
https://doi.org/10.1117/12.511364
Autor:
Markus Luenenbuerger, Bernd Schineller, G. P. Yablonskii, Vitalii Z. Zubialevich, I.P. Marko, Michael Heuken, A. L. Gurskii, A. Alam, Lutsenko Evgenii Viktorovich, Harry Protzmann, V. N. Pavlovskii
Publikováno v:
SPIE Proceedings.
The influence of layer thickness, heterostructure design, optical confinement factor and spontaneous emission efficiency on laser parameters of GaN based quantum well optically pumped lasers is studied in wide spectral (373 - 470 nm), temperature (77
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14accae148335f9c07bbfe6b4dd44d37
https://doi.org/10.1117/12.468986
https://doi.org/10.1117/12.468986
Autor:
Harry Protzmann, Alois Krost, Armin Dadgar, Michael D. Bremser, Bernd Schineller, Egbert Woelk, Markus Luenenbuerger, Michael Heuken, A. Alam
Publikováno v:
SPIE Proceedings.
We report results on the transferability of a blue-green electroluminescence test structure (ELT) process across different reactor geometries and substrate materials. The process was transferred from the conditions of our well-known 6 X 2 inch to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d4687e8b13ff175ac32e216bcf4becd
https://doi.org/10.1117/12.426846
https://doi.org/10.1117/12.426846
Autor:
E. V. Lutsenko, Markus Luenenbuerger, Michael Heuken, G. P. Yablonskii, Bernd Schineller, H. Protzmann
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e7acf4e5773397ae19fc0d03a1e87d
https://doi.org/10.1142/9789812810076_0065
https://doi.org/10.1142/9789812810076_0065
Autor:
E. V. Lutsenko, I.P. Marko, Michael Heuken, B. Schtneller, A. V. Mudryi, Harry Protzmann, Markus Luenenbuerger, Vitaly Z. Zubialevich, V. N. Pavlovskii, G. P. Yablonskii
Publikováno v:
Physics, Chemistry and Application of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::176204ac39cc55442f27fdd88a94968f
https://doi.org/10.1142/9789812810076_0078
https://doi.org/10.1142/9789812810076_0078
Publikováno v:
SPIE Proceedings.
Normal incidence reflectivity measurements were carried out in an AIX 2000G3HT Multiwafer Planetary ReactorR MOVPE system, a large scale production tool for GaN-based devices, and in the single wafer AIX 200 RF system. In situ monitoring was used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::793e32529d00bcf3ea825b19730d0ae1
https://doi.org/10.1117/12.382818
https://doi.org/10.1117/12.382818