Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Markus Glatthaar"'
Autor:
Armin Richter, Sven Kluska, Stefan W. Glunz, Victoria Davis, Anna Fischer, Jonas Bartsch, Markus Glatthaar, Thibaud Hatt
Publikováno v:
ACS Applied Materials & Interfaces. 13:5803-5813
A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask du
Publikováno v:
IEEE Journal of Photovoltaics. 10:1455-1462
Plating is an emergent cost-effective metallization technology for depositing solar cell metal contacts. Plated contacts, however, typically plate in-homogeneously where fingers plate higher than busbars and solar cell edges plate particularly higher
Autor:
Thibaud, Hatt, Jonas, Bartsch, Victoria, Davis, Armin, Richter, Sven, Kluska, Stefan W, Glunz, Markus, Glatthaar, Anna, Fischer
Publikováno v:
ACS applied materialsinterfaces. 13(4)
A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask du
Autor:
Gisela Cimiotti, Bernd Steinhauser, Sven Kluska, Benjamin Grubel, Damian Brunner, M. Passig, Markus Glatthaar, Christian Schmiga, Varun Arya, N. Bay
The metallization of bifacial tunneling oxide and passivating contacts (TOPCon) solar cells without initial metal seed layer by electroplating of Ni/Cu/Ag is demonstrated. The presented approach allows a lead-free metallization with narrow contact ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbc8056398a7b28f3a2c8fa6f986f9d3
https://publica.fraunhofer.de/handle/publica/267663
https://publica.fraunhofer.de/handle/publica/267663
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Our novel metallization approach for silicon heterojunction (SHJ) solar cells takes advantage of a PVD metal-stack covered with a structured self-passivated Al layer as mask for electroplating a Cu grid. This plating metallization route enables a ver
Publikováno v:
Solar Energy Materials and Solar Cells. 173:92-95
As the efficiency of silicon solar cells increases continuously, recombination at the metal contacts becomes more and more limiting, unless the contacts are passivated. Passivating contact layers on the front side, however, usually lead to parasitic
Autor:
Markus Glatthaar, Thibaud Hatt, Armin Richter, Jan Christoph Goldschmidt, Jonas Bartsch, Patricia S. C. Schulze, Stefan W. Glunz, Özde Ş. Kabakli
Publikováno v:
Solar RRL. 5:2100381
Electroplated copper contacts on small-area single-junction perovskite solar cells (PSCs) using an atomic layer deposited (ALD) Al2O3 masking layer on ITO are demonstrated for the first time. The photoconversion efficiency of ≈11% after manufacturi
Autor:
A.J. Beinert, Viola Haueisen, Martin C. Schubert, Sven Kluska, Markus Glatthaar, Pascal Romer, Andreas Büchler, Friedemann D. Heinz
Publikováno v:
Energy Procedia. 124:18-23
Confocal micro-Raman spectroscopy allows for spatially resolved measurements of the phonon energy in silicon, which is correlated to mechanical stress. Mechanical stress is a tensorial quantity. For the confocal measurement geometry and certain cryst
Publikováno v:
Energy Procedia. 124:901-906
We introduce a new plated metallization process for Silicon Heterojunction (SHJ) solar cells by selective plating of copper onto a positively masking seed layer. This process tackles the issues of high silver consumption and low grid conductivity of
Autor:
Sven Kluska, Markus Glatthaar, Fabian Meyer, Andreas Büchler, Jonas Bartsch, Gisela Cimiotti, Andreas Brand
Publikováno v:
Solar Energy Materials and Solar Cells. 166:197-203
Light-induced plating of a Ni-Cu-Ag stack allows for high efficient and potentially low cost solar cell metallization. The definition of the contact structure is performed by local laser ablation of the solar cells surface passivation layer. By using