Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Markus Fuhrer"'
Autor:
Keith W. J. Barnham, N. P. Hylton, J.S. Roberts, Markus Fuhrer, Diego Alonso-Álvarez, Nicholas J. Ekins-Daukes, K.-H. Lee
Publikováno v:
IEEE Journal of Photovoltaics. 7:817-821
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is demonstrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49be7021e1999eabc43d3adc6efb674c
https://doi.org/10.1109/jphotov.2017.2660759
https://doi.org/10.1109/jphotov.2017.2660759
Autor:
Massimo Mazzer, James P. Connolly, Louise C. Hirst, Keith W. J. Barnham, Vincent R. Whiteside, Ian R. Sellers, Markus Fuhrer, Brandon K. Durant
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Jun 2019, Chicago, France. pp.0760-0764, ⟨10.1109/PVSC40753.2019.8980957⟩
IEEE 46th Photovoltaic Specialists Conference (PVSC), pp. 760–764, Chicago, IL, USA, JUN 16-21, 2019
info:cnr-pdr/source/autori:Barnham K.; Durant B.K.; Connolly J.P.; Fuhrer M.F.; Hirst L.; Sellers I.R.; Mazzer M.; Whiteside V.R./congresso_nome:IEEE 46th Photovoltaic Specialists Conference (PVSC)/congresso_luogo:Chicago, IL, USA/congresso_data:JUN 16-21, 2019/anno:2019/pagina_da:760/pagina_a:764/intervallo_pagine:760–764
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), Jun 2019, Chicago, France. pp.0760-0764, ⟨10.1109/PVSC40753.2019.8980957⟩
IEEE 46th Photovoltaic Specialists Conference (PVSC), pp. 760–764, Chicago, IL, USA, JUN 16-21, 2019
info:cnr-pdr/source/autori:Barnham K.; Durant B.K.; Connolly J.P.; Fuhrer M.F.; Hirst L.; Sellers I.R.; Mazzer M.; Whiteside V.R./congresso_nome:IEEE 46th Photovoltaic Specialists Conference (PVSC)/congresso_luogo:Chicago, IL, USA/congresso_data:JUN 16-21, 2019/anno:2019/pagina_da:760/pagina_a:764/intervallo_pagine:760–764
Photon gain, which indicates the breakdown of the Principle of Detailed Balance, has been observed in radiatively dominated quantum well solar cells (QWSCs) at illumination levels consistent with around 200x concentration. Evidence comes from three t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fe0c873267eb5005ca81fe930641274
https://hal-centralesupelec.archives-ouvertes.fr/hal-02635536
https://hal-centralesupelec.archives-ouvertes.fr/hal-02635536
Autor:
Radek Roucka, Markus Fuhrer, Andrew G. Clark, Rick Hoffman, Andrew Johnson, Nicholas J. Ekins-Daukes, T. Wilson, David Begarney, Tomos Thomas
Publikováno v:
IEEE Journal of Photovoltaics. 6:1025-1030
SiGeSn ternary alloys offer a means to fabricate a 1.0-eV subcell junction for inclusion in a multijunction solar cell. The main advantage of the SiGeSn alloy is a tuneable bandgap energy and variable lattice parameter, enabling the material to be in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6b3c7136c4cb4aa30a42751555818e
https://doi.org/10.1109/jphotov.2016.2559785
https://doi.org/10.1109/jphotov.2016.2559785
Publikováno v:
Materials Research Innovations. 19:503-507
As we progress towards the next generation of multi-junction solar cell technology, incorporating four junctions or more, current dual-layer coating technology applied to commercially available triple-junction solar cells will become inadequate as th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19c2b8fcf546448153621cdbd5965f61
https://doi.org/10.1080/14328917.2015.1115630
https://doi.org/10.1080/14328917.2015.1115630
Autor:
Kentaroh Watanabe, Yoshiaki Nakano, Markus Fuhrer, Tomos Thomas, Kasidit Toprasertpong, Hiromasa Fujii, Nicholas J. Ekins-Daukes, Diego Alonso-Álvarez, Masakazu Sugiyama, Daniel J. Farrell, Yoshitaka Okada
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:533-542
Bandgap engineering of strain-balanced InGaAs/GaAsP multiple quantum wells (MQWs) allows high-quality materials with an absorption edge beyond GaAs to be epitaxially grown in Ge/GaAs-based multijunction solar cells. We demonstrate MQW solar cells wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91dbf959730d39dcc9b1859757c9ba5
https://doi.org/10.1002/pip.2585
https://doi.org/10.1002/pip.2585
Autor:
Markus Fuhrer, Michael K. Yakes, Louise C. Hirst, Christopher G. Bailey, Joseph G. Tischler, María Ujué González, Matthew P. Lumb, Nicholas J. Ekins-Daukes, Robert J. Walters
Publikováno v:
IEEE Journal of Photovoltaics. 4:1526-1531
Hot-carrier solar cells require absorber materials with restricted carrier thermalization pathways, in order to slow the rate of heat energy dissipation from the carrier population to the lattice, relative to the rate of carrier extraction. Absorber
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e01667d1818d0a88a32f0918ebd7d13
https://doi.org/10.1109/jphotov.2014.2355412
https://doi.org/10.1109/jphotov.2014.2355412
Publikováno v:
IEEE Journal of Photovoltaics. 4:1306-1313
III-V multijunction solar cells (MJSCs) operate close to the radiative limit under solar concentration. In this regime, radiative losses from the semiconductor material in one junction of the solar cell can be absorbed by a subsequent junction, there
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb29c582f61144bbc3a59127447b198
https://doi.org/10.1109/jphotov.2014.2337520
https://doi.org/10.1109/jphotov.2014.2337520
Autor:
Tomos Thomas, Nicholas J. Ekins-Daukes, Andrew G. Clark, Andrew Johnson, Markus Fuhrer, David Begarney, Radek Roucka, T. Wilson, Rick Hoffman
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
The performance of quad-junction Ge based III-V multi-junction solar cells depends upon successful integration of a 1.0eV sub-cell into the existing InGaP/In 0.01 GaAs/Ge stack. The SiGeSn ternary alloy offers a means to fabricate a lattice-matched,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cfef786ab504e956e7fe90e27427063
https://doi.org/10.1109/pvsc.2016.7750062
https://doi.org/10.1109/pvsc.2016.7750062
Autor:
Markus Fuhrer, Tomos Thomas, Rick Hoffman Jnr., Radek Roucka, Andrew D. Johnson, Nicholas J. Ekins-Daukes, Thomas E. Wilson, Andrew G. Clark, David Begarney
Publikováno v:
AIP Conference Proceedings.
Multi-junction photovoltaic technologies lead the way to achieving ultra-high power conversion efficiencies for both space based and terrestrial concentrator applications. However, realizing a lattice matched quad-junction solar cell remains challeng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be8ad74e3fab73727e201e2debd3640
https://doi.org/10.1063/1.4962096
https://doi.org/10.1063/1.4962096
Autor:
Andrew Johnson, Wan Khai Loke, Tomos Thomas, Satrio Wicaksono, Markus Fuhrer, Diego Alonso Alvarez, Ned Ekins-Daukes, Kian Hua Tan, Soon Fatt Yoon
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Photovoltaic devices made from a dilute nitride material, GaAsNSb, with band-gap close to 1eV have been developed and characterised. Homojunction devices of n-on-p and p-on-n type as well as an n-on-p GaAs/GaNAsSb heterojunction have been grown by mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3feb9d7f49221595260df1859b631290
https://doi.org/10.1109/pvsc.2014.6924980
https://doi.org/10.1109/pvsc.2014.6924980