Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Markus Feifel"'
Autor:
Thomas Hannappel, Peter Kleinschmidt, Christian Koppka, Manali Nandy, Frank Dimroth, Agnieszka Paszuk, Markus Feifel
Publikováno v:
Crystal Growth & Design. 21:5603-5613
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e3d8082c2d07a930430beae1a225a4
https://doi.org/10.1021/acs.cgd.1c00410
https://doi.org/10.1021/acs.cgd.1c00410
Autor:
Jia Guo, Yunlong Zhao, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Lukas Chrostowski, David Lackner, Chao-hsin Wu, Guangrui (Maggie) Xia
Publikováno v:
Optical Materials Express. 13:1077
We report the fabrication of monolithically integrated 940 nm AlGaAs distributed Bragg reflectors (DBRs) on graded GaAsP/Si substrates. Low-density surface bumps and cross-hatch patterns were observed on the DBR surfaces. Cross-sectional DBR layers a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbf9dcb9af6b6fdb87678dcc9170d72e
https://doi.org/10.1364/ome.484840
https://doi.org/10.1364/ome.484840
Autor:
Frank Dimroth, Christian Koppka, Manali Nandy, Thomas Hannappel, Peter Kleinschmidt, Agnieszka Paszuk, Markus Feifel
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Recent advances in III-V-on-Si heteroepitaxy have led to the demonstration of multi junction solar cells with improved photovoltaic conversion efficiencies. However, their performance is still limited by a high defect concentration at the GaP/Si(100)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f72ffe8381873ad6a05cd78e9c05aac1
https://doi.org/10.1109/pvsc43889.2021.9518758
https://doi.org/10.1109/pvsc43889.2021.9518758
Publikováno v:
Solar RRL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::08f6d8616a17d63b07117189d06a44e3
Autor:
David Lackner, Moritz Kölbach, Oliver Höhn, Fatwa F. Abdi, Markus Feifel, Matthias M. May, Ciler Özen
Recently, significant progress in the development of III-V/Si dual-junction solar cells has been achieved. This not only boosts the efficiency of Si-based photovoltaic solar cells, but also offers the possibility of highly efficient green hydrogen pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77952e33d0f6ea43d0803d6331816d5b
Autor:
Martin Hermle, Jens Ohlmann, Thomas Hannappel, Markus Feifel, Kerstin Volz, David Lackner, Frank Dimroth, Jan Benick
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Epitaxial III-V on silicon multi-junction solar cells allow to increase the conversion efficiency of single-junction silicon devices. We report progress on the development of high-efficiency GaInP/GaAs/Si triple-junction devices over the last two yea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f23137b931192b198fde2db39fea71ce
https://doi.org/10.1109/pvsc45281.2020.9300594
https://doi.org/10.1109/pvsc45281.2020.9300594
Autor:
Yunlong Zhao, Jia Guo, Markus Feifel, Hao-Tien Cheng, Yun-Cheng Yang, Liming Wang, Lukas Chrostowski, David Lackner, Chao-Hsin Wu, Guangrui (Maggie) Xia
Publikováno v:
Optical Materials Express. 12:1131
High quality 940 nm AlxGa1-xAs n-type distributed Bragg reflectors (DBRs) were successfully monolithically grown on off-cut Ge (100) substrates. The Ge-DBRs have reflectivity spectra comparable to those grown on conventional bulk GaAs substrates and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bf9b0f3cd1ee05af1a771da291d6ec
https://doi.org/10.1364/ome.452161
https://doi.org/10.1364/ome.452161
Autor:
Andreas Beyer, Jens Ohlmann, Andreas W. Bett, Thomas Hannappel, Martin Hermle, David Lackner, Frank Dimroth, Jan Benick, Jürgen Belz, Markus Feifel, Kerstin Volz
Publikováno v:
IEEE Journal of Photovoltaics. 8:1590-1595
Monolithic multi-junction solar cells made on active silicon substrates are a promising pathway for low-cost high-efficiency devices. We present results of GaInP/GaAs/Si triple-junction solar cells, fabricated by direct growth on silicon in a metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b59f1df51f590ea06d4992413dc097c
https://doi.org/10.1109/jphotov.2018.2868015
https://doi.org/10.1109/jphotov.2018.2868015
Autor:
David Lackner, Jens Ohlmann, Andreas Beyer, Stefan Janz, Thomas Rachow, Jürgen Belz, Frank Dimroth, Jan Benick, Kerstin Volz, Martin Hermle, Markus Feifel
Publikováno v:
IEEE Journal of Photovoltaics. 7:502-507
Gallium phosphide (GaP) is, in theory, a near-ideal heteroemitter for silicon solar cells due to its electronic and crystal properties. In this paper, we present n-type gallium phosphide on p-type silicon heterojunction solar cells which have been pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f487bc6678f49e27667267ebc23f5d6
https://doi.org/10.1109/jphotov.2016.2642645
https://doi.org/10.1109/jphotov.2016.2642645
Autor:
Felix Predan, Jonas Schön, Jens Ohlmann, Markus Feifel, David Lackner, Martin Hermle, Jan Benick, Frank Dimroth, Gerald Siefer
Publikováno v:
Solar RRL. :2000763
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08f6d8616a17d63b07117189d06a44e3
https://doi.org/10.1002/solr.202000763
https://doi.org/10.1002/solr.202000763