Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Autor: Peter Moens, Michael J. Uren, Serge Karboyan, Markus Caesar, Martin Kuball, Piet Vanmeerbeek

Publikováno v: Uren, M J, Caesar, M, Karboyan, S, Moens, P, Vanmeerbeek, P & Kuball, M H H 2015, ' Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors ', IEEE Electron Device Letters, vol. 36, no. 8, pp. 826-828 . https://doi.org/10.1109/led.2015.2442293

It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path fr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f07d5b07d8ec3bdb05441d2613a04fd4
https://doi.org/10.1109/led.2015.2442293

On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices

Autor: A. Banerjee, Gaudenzio Meneghesso, Charlie Liu, Markus Caesar, Michael J. Uren, Martin Kuball, Piet Vanmeerbeek, Marnix Tack, Peter Moens, Matteo Meneghini, Ali Salih, Jia Guo, Enrico Zanoni, Peter Coppens

Publikováno v: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is substa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2078545910ac2f993c4b362973a543b
https://doi.org/10.1109/ispsd.2015.7123383