Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Autor: Rainer Minixhofer, Karl Rupp, Hajdin Ceric, Yannick Wimmer, Hubert Enichlmair, Markus Bina, Stanislav Tyaginov, Prateek Sharma, Florian Rudolf, Jong Mun Park, Tibor Grasser

Publikováno v: IEEE Transactions on Electron Devices. 62:1811-1818

We propose two different approaches to describe carrier transport in n-laterally diffused MOS (nLDMOS) transistor and use the calculated carrier energy distribution as an input for our physical hot-carrier degradation (HCD) model. The first version r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e7567c765d27db402f4962d085ca901
https://doi.org/10.1109/ted.2015.2421282

Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric

Autor: J. Franco, Tibor Grasser, Yu. Yu. Illarionov, Markus Bina, Stanislav Tyaginov, Mikhail I. Vexler, B. Kaczer, Johann Cervenka

Publikováno v: Journal of Computational Electronics. 13:733-738

We model the main characteristics of metal-insulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to stand

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebe604e47f6ec19df4fdb84cb53b2cfd
https://doi.org/10.1007/s10825-014-0593-9

Automated vertical design co-optimization of a 1200V IGBT and diode

Autor: Markus Bina, Franz Josef Niedernostheide, Ch. Sandow, Alexander Philippou, Moritz Hauf

Publikováno v: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

In this work, we concentrate on extending our optimization method for IGBTs [1] in drives applications by incorporating diode parameters in addition to IGBT parameters. For this purpose, the fabrication process of the diode, including a platinum diff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4c4daaf8c9c699c9605d668b925bf08
https://doi.org/10.1109/sispad.2016.7605178

Origins and implications of increased channel hot carrier variability in nFinFETs

Autor: Aaron Thean, Ph. J. Roussel, Erik Bury, Tibor Grasser, V. Putcha, Stanislav Tyaginov, Naoto Horiguchi, Gregory Pitner, Thomas Chiarella, Luis-Miguel Procel, Ben Kaczer, Zhigang Ji, Felice Crupi, Jacopo Franco, A. De Keersgieter, Pieter Weckx, Guido Groeseneken, Yannick Wimmer, Markus Bina, Lionel Trojman, Moonju Cho

Publikováno v: 2015 IEEE International Reliability Physics Symposium (IRPS)
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.3B.5.1-3B.5.6, ⟨10.1109/IRPS.2015.7112706⟩
IRPS

Channel hot carrier (CHC) stress is observed to result in higher variability of degradation in deeply-scaled nFinFETs than bias temperature instability (BTI) stress. Potential sources of this increased variation are discussed and the intrinsic time-d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::203b6d7bb8d6108b6824462c91bf4443
https://hal.archives-ouvertes.fr/hal-02952187

Dominant mechanisms of hot-carrier degradation in short- and long-channel transistors

Autor: Markus Bina, B. Kaczer, Hubert Enichlmair, J. Franco, Hajdin Ceric, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Jong Mun Park, Tibor Grasser

Publikováno v: 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).

Using our physics-based model for hot-carrier degradation (HCD) we analyze the role of such important processes as the Si-H bond-breakage induced by a solitary hot carrier, bond dissociation triggered by the miltivibrational excitation of the bond, a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f32c187c8818daaebc1a76e145a80815
https://doi.org/10.1109/iirw.2014.7049512