Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Markus Baranowski"'
Autor:
Markus Baranowski, Roland Sachser, Bratislav P. Marinković, Stefan Dj. Ivanović, Michael Huth
Publikováno v:
Nanomaterials, Vol 12, Iss 23, p 4145 (2022)
We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the char
Externí odkaz:
https://doaj.org/article/554ccdf450714af9a93eabcf994101f3
Autor:
Friedemann Völklein, Alexander Kaya, Jens Müller, Pintu Das, Heiko Reith, Fabrizio Porrati, Roland Sachser, Markus Baranowski, Christina Grimm, Christian H. Schwalb, Michael Huth
Publikováno v:
Sensors, Vol 10, Iss 11, Pp 9847-9856 (2010)
This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique
Externí odkaz:
https://doaj.org/article/5b70093655ce43879f07dcc251c56ae7
Autor:
Huth, Markus Baranowski, Roland Sachser, Bratislav P. Marinković, Stefan Dj. Ivanović, Michael
Publikováno v:
Nanomaterials; Volume 12; Issue 23; Pages: 4145
We fabricated memristive devices using focused electron beam-induced deposition (FEBID) as a direct-writing technique employing a Pt/TiO2/Pt sandwich layer device configuration. Pinching in the measured current-voltage characteristics (i-v), the char
Autor:
Heiko Reith, Jens Müller, F. Völklein, Michael Huth, Pintu Das, Roland Sachser, Christian H. Schwalb, Markus Baranowski, Fabrizio Porrati, Alexander Dr. Kaya, Christina Grimm
Publikováno v:
Sensors, Vol 10, Iss 11, Pp 9847-9856 (2010)
Sensors; Volume 10; Issue 11; Pages: 9847-9856
Sensors (Basel, Switzerland)
Sensors; Volume 10; Issue 11; Pages: 9847-9856
Sensors (Basel, Switzerland)
This paper introduces a new methodology for the fabrication of strain-sensor elements for MEMS and NEMS applications based on the tunneling effect in nano-granular metals. The strain-sensor elements are prepared by the maskless lithography technique
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2556b920023f727cedb2a6875ccba90
http://publikationen.ub.uni-frankfurt.de/files/24273/sensors-10-09847.pdf
http://publikationen.ub.uni-frankfurt.de/files/24273/sensors-10-09847.pdf