Výsledky vyhledávání - "Markovskiy, E.P."

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis

Autor: Arsentyev, I.N., Bobyl, A.V., Tarasov, I.S., Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Kamalov, A.B., Konakova, R.V., Kudryk, Ya.Ya., Lytvyn, O.S., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V.

A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. We demonstrate the advanta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::c117a2fc91d9b579200c17fd00771766
http://dspace.nbuv.gov.ua/handle/123456789/121574

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Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis

Autor: Belyaev, A.E., Bobyl, A.V., Boltovets, N.S., Ivanov, V.N., Konakova, R.V., Konnikov, S.G., Kudryk, Ya.Ya., Markovskiy, E.P., Milenin, V.V., Rudenko, E.M., Tereschenko, G.F., Ulin, V.P., Ustinov, V.M., Tsirlin, G.E., Shpak, A.P.

The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the 44−59 GHz (firs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::d5d2ad62a5c392ff1e2275fb17f3a0d9
http://dspace.nbuv.gov.ua/handle/123456789/121562

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Porous nanostructured InP: technology, properties, application

Autor: Arsentyev, I. N., Bobyl, A.B., Konnikov, S.G., Tarasov, I.S., Ulin, V.P, Shishkov, M.V., Boltovets, N.S., Ivanov, V.N., Belyaev, A.E., Konakova, R.V., Kudryk, Ya.Ya., Kamalov, A.B., Lytvyn, P.M., Markovskiy, E.P., Milenin, V.V., Red’ko, R.A.

We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP epilayers grown on them were stu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1456::3b4ca59634db9d27e24a956925f79f65
http://dspace.nbuv.gov.ua/handle/123456789/121572

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