Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Marko Tuominen"'
Autor:
Puurunen, R.L.
Publikováno v:
Chemical Vapor Deposition; October 2003, Vol. 9 Issue: 5 p249-257, 9p
Autor:
Michael Eugene Givens, Mikko Ritala, Tom E. Blomberg, Suvi Haukka, Marko Tuominen, Simon D. Elliott, Suresh Kondati Natarajan, Varun Sharma
Funding Information: The authors thank Eurofins EAG Materials Science, LLC (California, USA) for the TEM analysis. S.K.N. thanks ICHEC and the Science Foundation Ireland funded computing center of Tyndall National Institute for computer time. S.K.N.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cf60432dff29ef3691bdf600bffcf3a
https://aaltodoc.aalto.fi/handle/123456789/112919
https://aaltodoc.aalto.fi/handle/123456789/112919
Autor:
Mikko Ritala, Tom E. Blomberg, Suvi Haukka, Varun Sharma, Michael Eugene Givens, Marko Tuominen, Simon D. Elliott
Thermal atomic layer etching (ALEt) of amorphous Al2O3 was performed by alternate exposures of niobium pentafluoride (NbF5) and carbon tetrachloride (CCl4). The ALEt of Al2O3 is observed at temperatures from 380 to 460 degrees C. The etched thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff1c691cd10c5d76b23653f4a6d79c67
http://hdl.handle.net/10138/343050
http://hdl.handle.net/10138/343050
Autor:
Gauthier Lefevre, Tristan Dewolf, Nicolas Guillaume, Serge Blonkowski, Christelle Charpin-Nicolle, Eric Jalaguier, Etienne Nowak, Nicolas Bernier, Tom Blomberg, Marko Tuominen, Hessel Sprey, Guillaume Audoit, Sylvie Schamm-Chardon
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2021, 130 (24), pp.244501. ⟨10.1063/5.0072343⟩
Journal of Applied Physics, 2021, 130 (24), pp.244501. ⟨10.1063/5.0072343⟩
International audience; Metal oxide-based resistive random access memory devices are highly attractive candidates for next-generation nonvolatile memories, butthe resistive switching phenomena remain poorly understood. This article focuses on the mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0fc9c75e2904caa58ba963d3a81c7c11
https://doi.org/10.1063/5.0072343
https://doi.org/10.1063/5.0072343
Autor:
Riikka L. Puurunen, Helena Ronkainen, Antti Vaajoki, Lauri Kilpi, Marko Tuominen, Sakari Sintonen, Jari Malm, Oili Ylivaara
Publikováno v:
Kilpi, L, Ylivaara, O M E, Vaajoki, A, Malm, J, Sintonen, S, Tuominen, M, Puurunen, R L & Ronkainen, H 2016, ' Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 34, no. 1, 01A124 . https://doi.org/10.1116/1.4935959
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d3a53e1dd0e1f6a3ef19360edaa38ff
https://cris.vtt.fi/en/publications/ab67e05d-956c-4f59-98ca-950e3c0ba5b4
https://cris.vtt.fi/en/publications/ab67e05d-956c-4f59-98ca-950e3c0ba5b4
Autor:
Lauri Kilpi, Oili Ylivaara, Anssi Vaajoki, Xuwen Liu, Ville Rontu, Sakari Sintonen, Eero Haimi, Markus Bosund, Marko Tuominen, Timo Sajavaara, Harri Lipsanen, Simo-Pekka Hannula, Riikka Puurunen, Helena Ronkainen
Publikováno v:
Kilpi, L, Ylivaara, O, Vaajoki, A, Liu, X, Rontu, V, Sintonen, S, Haimi, E, Bosund, M, Tuominen, M, Sajavaara, T, Lipsanen, H, Hannula, S-P, Puurunen, R & Helena, R 2016, ' Tribological properties of atomic layer deposited thin films against silicon ', 17th Nordic Symposium on Tribology, NORDTRIB 2016, Hämeenlinna, Finland, 14/06/16-17/06/16 .
VTT Technical Research Centre of Finland-PURE
VTT Technical Research Centre of Finland-PURE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a77d95920b1590d91ef09b4f687e948
https://cris.vtt.fi/en/publications/ffcbef54-4f20-4bbf-9274-6291d671c543
https://cris.vtt.fi/en/publications/ffcbef54-4f20-4bbf-9274-6291d671c543
Autor:
Suvi Haukka, Ch. Wenger, M. Lukosius, T. Saukkonen, Marko Tuominen, Jaakko Anttila, Tom E. Blomberg
Publikováno v:
Thin Solid Films. 520:6535-6540
Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2–1 μm) and low X-ray reflectivity roughness (~ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu 3 Cp)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd46d1c1793d7a1e0b6bf9277ca53bc
https://doi.org/10.1016/j.tsf.2012.06.059
https://doi.org/10.1016/j.tsf.2012.06.059
Publikováno v:
ECS Transactions. 13:453-457
A remarkably high growth rate of more than 1 Aå/cycle was obtained when using a new aminosilane precursor AHEAD{trade mark, serif} for atomic layer deposition of SiO2 thin films. The films were deposited at 150 - 300 {degree sign}C on 200 mm wafers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56c38bc1f2ebb693acbfbd1f45a51754
https://doi.org/10.1149/1.2911529
https://doi.org/10.1149/1.2911529
Publikováno v:
ECS Transactions. 1:131-135
Niobium nitride NbN and niobium silicon nitride Nb(Si)N were deposited by Atomic Layer Deposition (ALD) from niobium pentachloride NbCl5, silicon tetrachloride SiCl4, and ammonia NH3. It was shown that low resistivity NbN can be more readily processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f522e2ac5b92882abec3a19062f2d65
https://doi.org/10.1149/1.2209338
https://doi.org/10.1149/1.2209338