Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Marko Sokolich"'
Autor:
Fabrizio Nichele, Henri J Suominen, Morten Kjaergaard, Charles M Marcus, Ebrahim Sajadi, Joshua A Folk, Fanming Qu, Arjan J A Beukman, Folkert K de Vries, Jasper van Veen, Stevan Nadj-Perge, Leo P Kouwenhoven, Binh-Minh Nguyen, Andrey A Kiselev, Wei Yi, Marko Sokolich, Michael J Manfra, Eric M Spanton, Kathryn A Moler
Publikováno v:
New Journal of Physics, Vol 18, Iss 8, p 083005 (2016)
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from th
Externí odkaz:
https://doaj.org/article/e705ca0f38fa40dcbf63a420cff38a82
Autor:
Fanming Qu, Binh-Minh Nguyen, Folkert K. de Vries, V. P. Ostroukh, Marko Sokolich, Wei Yi, Michael Wimmer, Michael J. Manfra, Tom Timmerman, Jasper van Veen, Leo P. Kouwenhoven, Arjan J. A. Beukman, Andrey A. Kiselev, Charles Marcus
Publikováno v:
Physical Review Letters
Physical Review Letters, 120(4)
Physical Review Letters, 120(4), 047702
Physical Review Letters, 120(4)
Physical Review Letters, 120(4), 047702
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We
Autor:
Fanming Qu, Michael J. Manfra, Andrey A. Kiselev, Arjan J. A. Beukman, Fabrizio Nichele, Rafal Skolasinski, David de Vries, Jasper van Veen, Leo P. Kouwenhoven, Folkert K. de Vries, Wei Yi, Michael Wimmer, Binh-Minh Nguyen, Charles Marcus, Marko Sokolich
Publikováno v:
Physical Review B, 96(24)
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a27bc3fdbb4d5d2f5589a63acd7349d4
http://resolver.tudelft.nl/uuid:7717b72a-75cf-4692-829b-5ad7598f8e42
http://resolver.tudelft.nl/uuid:7717b72a-75cf-4692-829b-5ad7598f8e42
Autor:
Binh-Minh Nguyen, Leo P. Kouwenhoven, Folkert K. de Vries, Charles Marcus, Marko Sokolich, Fanming Qu, Andrey A. Kiselev, Fabrizio Nichele, Wei Yi, Michael Wimmer, Michael J. Manfra, Arjan J. A. Beukman, Jasper van Veen
Publikováno v:
Nano letters. 16(12)
Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an al
Autor:
Andrey A. Kiselev, Matthew Borselli, Thomas Hazard, Andrew T. Hunter, Marko Sokolich, Thaddeus D. Ladd, K.S. Holabird, Ivan Alvarado-Rodriguez, Brett M. Maune, Peter W. Deelman, Mark F. Gyure, Richard S. Ross, Biqin Huang, Adele E. Schmitz, Edward T. Croke
Publikováno v:
ECS Transactions. 50:823-829
Electrically defined silicon-based qubits are expected to show improved quantum memory characteristics in comparison with GaAs-based devices due to reduced hyperfine interactions with nuclear spins. Silicon-based qubit devices have proved more challe
Autor:
Dustin Le, Yakov Royter, Donald A. Hitko, K.R. Elliott, Margaret F. Boag-O'Brien, Daniel Zehnder, Steven T. W. Chen, Pamela R. Patterson, Thomas C. Oh, M.C. Montes, James Chingwei Li, Samual Kim, Tahir Hussain, Aurelio Lopez, Marko Sokolich, Fiona C. Ku, David H. Chow, Moonmoon Akmal, J. Duvall, Irma Valles, Eason F. Wang, Peter D. Brewer
Publikováno v:
ECS Transactions. 50:1047-1054
Historically, compound semiconductors have enjoyed the benefit of material properties that lend themselves to high performance electron devices, but the ability to fabricate complex, high transistor count ICs is limited by the relative immaturity of
Autor:
Binh-Minh Nguyen, Henri J. Suominen, Fanming Qu, Charles Marcus, Fabrizio Nichele, Morten Kjaergaard, Ramsey Noah, Stevan Nadj-Perge, Andrey A. Kiselev, Michael J. Manfra, Arjan J. A. Beukman, Marko Sokolich, Leo P. Kouwenhoven, Wei Yi, Jasper van Veen, Folkert K. de Vries
Publikováno v:
Physical Review Letters. 117
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitiv
Autor:
Fabrizio Nichele, Rafal Skolasinski, Charles Marcus, Andrey A. Kiselev, Marko Sokolich, Fanming Qu, Michael J. Manfra, Arjan J. A. Beukman, Binh-Minh Nguyen, Henri J. Suominen, Morten Kjaergaard, Wei Yi, Michael Wimmer, Leo P. Kouwenhoven
Publikováno v:
Physical Review Letters, 118(1)
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can excee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2ad6eb00af31feaa41148a9ea456b59
http://arxiv.org/abs/1605.01241
http://arxiv.org/abs/1605.01241
Autor:
Binh-Minh, Nguyen, Andrey A, Kiselev, Ramsey, Noah, Wei, Yi, Fanming, Qu, Arjan J A, Beukman, Folkert K, de Vries, Jasper, van Veen, Stevan, Nadj-Perge, Leo P, Kouwenhoven, Morten, Kjaergaard, Henri J, Suominen, Fabrizio, Nichele, Charles M, Marcus, Michael J, Manfra, Marko, Sokolich
Publikováno v:
Physical review letters. 117(7)
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitiv
Autor:
Peter W. Deelman, Christopher A. Watson, Mark F. Gyure, Thaddeus D. Ladd, Adele E. Schmitz, Biqin Huang, Richard S. Ross, Andrey A. Kiselev, Brett M. Maune, Matthew Borselli, Marko Sokolich, Andrew T. Hunter, K.S. Holabird, Ivan Alvarado-Rodriguez
Publikováno v:
Nature. 481:344-347
Exploiting the weak interactions between electron spins and nuclear spins in silicon-based quantum dots leads to a dephasing time two orders of magnitude greater than in analogous gallium-arsenide-based devices, demonstrating the potential of silicon