Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Mark W. Wanlass"'
Autor:
Fan Zhang, Jose F. Castaneda, Timothy H. Gfroerer, Daniel Friedman, Yong-Hang Zhang, Mark W. Wanlass, Yong Zhang
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-12 (2022)
A measurement of PL intensity vs. excitation density, with the help of Raman, is shown capable of determine nearly all pertinent parameters of radiative and nonradiative recombination in a semiconductor.
Externí odkaz:
https://doaj.org/article/33e464bf63ba47b4bd4365305ed74276
Autor:
Chieh-Ting Lin, William E. McMahon, James S. Ward, John F. Geisz, Mark W. Wanlass, Jeffrey J. Carapella, Waldo Olavarria, Emmett E. Perl, Michelle Young, Myles A. Steiner, Ryan M. France, Alan E. Kibbler, Anna Duda, Tom E. Moriarty, Daniel J. Friedman, John E. Bowers
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:593-599
A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a “pillar-array” metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice-matched twotermin
This technical report documents a particular error in efficiency measurements of triple-absorber concentrator solar cells caused by incorrect spectral irradiance -- specifically, one that occurs when the irradiance from unfiltered, pulsed xenon solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b20f41f95d6a70e8e8185644ce97b20a
https://doi.org/10.2172/1126836
https://doi.org/10.2172/1126836
Autor:
John F. Geisz, J. Scott Ward, Anna Duda, Waldo Olavarria, Lynn Gedvilas, Michelle Young, Mark W. Wanlass, Jeff Carapella, Sarah R. Kurtz, Daniel J. Friedman, Manuel J. Romero, Myles A. Steiner, Andreas W. Bett, Robert D. McConnell, Gabriel Sala, Frank Dimroth
Publikováno v:
AIP Conference Proceedings.
The infrared (IR) portion of the solar spectrum with photon energies below the lowest bandgap in III–V multijunction photovoltaic devices does not contribute to electrical power and is typically ignored during solar cell design. In a three junction
Autor:
Lev V. Golubev, Mark W. Wanlass, Artsrun H. Arakelyan, Vladimir M. Aroutiounian, Vladimir A. Gevorkyan, Igor A. Andreev, K. M. Gambaryan, Yuri P. Yakovlev
Publikováno v:
AIP Conference Proceedings.
This report describes our efforts to fabricate lattice matched p‐InAsSbP/n‐InAs and p‐InAsSbP/n‐InAsSbP/n‐InAs epitaxial diode heterostructures for TPV converter applications. A new version of liquid‐phase electroepitaxy, step — cooling
Autor:
Katsuaki Tanabe, Daniel J. Aiken, Mark W. Wanlass, Anna Fontcuberta i Morral, Harry A. Atwater
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference; 2006, p768-771, 4p
Conference
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Conference
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