Zobrazeno 1 - 10
of 75
pro vyhledávání: '"Mark T. Edmonds"'
Autor:
Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer
Publikováno v:
Frontiers in Nanotechnology, Vol 5 (2024)
We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES)
Externí odkaz:
https://doaj.org/article/59940d10217c4af38b512f6f6e05a901
Autor:
Cornelius Krull, Marina Castelli, Prokop Hapala, Dhaneesh Kumar, Anton Tadich, Martina Capsoni, Mark T. Edmonds, Jack Hellerstedt, Sarah A. Burke, Pavel Jelinek, Agustin Schiffrin
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
Polynuclear metal-organic coordination complexes are often inaccessible by traditional synthetic chemistry methods. Here, the authors use on-surface supramolecular chemistry to form a planar trinuclear Fe complex, in which an accumulation of electron
Externí odkaz:
https://doaj.org/article/ff2716a9ecec41f0b9f10b8ab821f7b8
Autor:
Iolanda Di Bernardo, James Blyth, Liam Watson, Kaijian Xing, Yi-Hsun Chen, Shao-Yu Chen, Mark T Edmonds, Michael S Fuhrer
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09c509404cb55f33736a0c4f90f00dde
http://arxiv.org/abs/2307.09046
http://arxiv.org/abs/2307.09046
Autor:
Qianqian Wang, Jianzhou Zhao, Weikang Wu, Yinning Zhou, Qile Li, Mark T. Edmonds, Shengyuan A. Yang
Publikováno v:
Chinese Physics B.
Layered magnetic materials, such as MnBi2Te4, have drawn much attention owing to their potential for realizing 2D magnetism and possible topological states. Recently, FeBi2Te4, which is isostructural to MnBi2Te4, has been synthesized in experiment, b
Autor:
Lei Guo, Weiyao Zhao, Qile Li, Meng Xu, Lei Chen, Abdulhakim Bake, Thi-Hai-Yen Vu, Yahua He, Yong Fang, David Cortie, Sung-Kwan Mo, Mark T. Edmonds, Xiaolin Wang, Shuai Dong, Julie Karel, Ren-Kui Zheng
Publikováno v:
Physical Review B. 107
Autor:
Anton Tadich, Michael S. Fuhrer, Iolanda Di Bernardo, Yuefeng Yin, Mark T. Edmonds, Qile Li, Chi Xuan Trang, Antonija Grubišić-Čabo, Sung-Kwan Mo, Golrokh Akhgar, Nikhil V. Medhekar, Jinwoong Hwang
Publikováno v:
ACS Nano. 15:13444-13452
Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hal
Publikováno v:
Nano Letters. 20:6306-6312
A two-dimensional topological insulator (2DTI) has an insulating bulk and helical edges robust to nonmagnetic backscattering. While ballistic transport has been demonstrated in micron-scale 2DTIs, larger samples show significant backscattering and a
Autor:
Chang Liu, James L. Collins, Jack Hellerstedt, Cheng Tan, Shaffique Adam, Michael S. Fuhrer, Mark T. Edmonds, Golrokh Akhgar, Lan Wang
Publikováno v:
ACS Applied Materials & Interfaces. 12:35542-35546
Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts
Autor:
Golrokh, Akhgar, Qile, Li, Iolanda, Di Bernardo, Chi Xuan, Trang, Chang, Liu, Ali, Zavabeti, Julie, Karel, Anton, Tadich, Michael S, Fuhrer, Mark T, Edmonds
Publikováno v:
ACS applied materialsinterfaces. 14(4)
Understanding the air stability of MnBi
Autor:
Iolanda, Di Bernardo, James, Blyth, Liam, Watson, Kaijian, Xing, Yi-Hsun, Chen, Shao-Yu, Chen, Mark T, Edmonds, Michael S, Fuhrer
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 34(17)
Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS