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Autor:
Jerome K. Butler, Gary A. Evans, Jin Huang, Linglin Jiang, Preston Young, Daniel J. Smith, Mark Schuckert, Duy Phan
Publikováno v:
High-Power Diode Laser Technology XV.
Two AlGaAs/GaAs broadened waveguide laser structures, one asymmetric, one nearly symmetric, were designed for high power at about 780 nm. The design concept is based on low losses and higher gain for the fundamental mode with higher losses and lower
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e6fec8206204045521f8a82781d89d
https://doi.org/10.1117/12.2255065
https://doi.org/10.1117/12.2255065
