Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mark Saly"'
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 50(48)
The growth of rhenium nitride and rhenium metal thin films is presented using atomic layer deposition (ALD) with the precursors methyltrioxorhenium and 1,1-dimethylhydrazine. Saturative, self-limiting growth was determined at 340 °C for pulse times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ca2fca4622256e269b18c4681535b8e
https://pubmed.ncbi.nlm.nih.gov/34860223
https://pubmed.ncbi.nlm.nih.gov/34860223
Publikováno v:
Journal of Vacuum Science & Technology A. 38:012402
Atomic layer deposition (ALD) of ruthenium metal films is presented using (η4-2,3-dimethylbutadiene)(tricarbonyl)ruthenium [Ru(DMBD)(CO)3] with the coreactants 1,1-dimethylhydrazine, hydrazine, or tert-butylamine. The dependence of growth rate on pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39afbbeac1e03f7787eb3db9803dce1b
https://doi.org/10.1116/1.5125109
https://doi.org/10.1116/1.5125109
Publikováno v:
Chemistry of Materials. 27:4943-4949
Atomic layer deposition of cobalt silicide (CoSi2) thin films on H-terminated Si(111) surfaces, using the cobalt-based precursor tertiarybutylallylcobalttricarbonyl (tBu-AllylCo(CO)3) and trisilane, is investigated by in situ Fourier transform infrar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e5dfa8ddeec661d9cf6789c9dc1d49b
https://doi.org/10.1021/acs.chemmater.5b00743
https://doi.org/10.1021/acs.chemmater.5b00743
Publikováno v:
Coordination Chemistry Reviews. 257:3271-3281
Deposition of thin films with desired compositions, conformality and bonding to substrates is a key component in nanotechnology research. The growth of metal films by atomic layer deposition (ALD) has become an important field of study due to its wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::540a8a9c9390ad0835ba80f054c19654
https://doi.org/10.1016/j.ccr.2013.03.028
https://doi.org/10.1016/j.ccr.2013.03.028
Autor:
James A. Bellow, Mark Saly, Jaakko Julin, Joseph P. Klesko, Timo Sajavaara, Charles H. Winter
The atomic layer deposition (ALD) of films with the approximate compositions Mn3(BO3)2 and CoB2O4 is described using MnTp2 or CoTp2 [Tp ¼ tris(pyrazolyl)borate] with ozone. The solid state decomposition temperatures of MnTp2 and CoTp2 are 370 and 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::050a9b22993108f7364ac2971f7c4ae9
http://urn.fi/URN:NBN:fi:jyu-201609124078
http://urn.fi/URN:NBN:fi:jyu-201609124078
Publikováno v:
Chemistry of Materials. 24:1025-1030
Tertbutylallylcobalttricarbonyl (tBu-AllylCo(CO)3) is shown to have strong substrate selectivity during atomic layer deposition of metallic cobalt. The interaction of tBu-AllylCo(CO)3 with SiO2 surfaces, where hydroxyl groups would normally provide m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da28c6dc5ffd5c3acf03ff6908107973
https://doi.org/10.1021/cm2029189
https://doi.org/10.1021/cm2029189
Publikováno v:
Organometallics. 30:5010-5017
Treatment of MCl2 (M = Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1,4-di-tert-butyl-1,3-diazadiene (tBu2DAD) in tetrahydrofuran at ambient temperature afforded Cr(tBu2DAD)2 (38%), Mn(tBu...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96fd0979d7ab3eb0be712b6bcc595691
https://doi.org/10.1021/om200626w
https://doi.org/10.1021/om200626w
Autor:
Mark Saly
Publikováno v:
ECS Meeting Abstracts. :982-982
The microelectronics industry continues to experience high demand for new materials innovation driven by the need for solutions in the advanced patterning space. As device features and critical dimensions continue to shrink, the complexity of chip fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2edd1df4069312e265c51b2e447e1946
https://doi.org/10.1149/ma2018-02/30/982
https://doi.org/10.1149/ma2018-02/30/982
Autor:
Mary Jane Heeg, Charles H. Winter, Mark Saly, Philip D. Martin, Kalutarage Lakmal C, David S. Kuiper
Publikováno v:
Inorganic Chemistry. 52:1182-1184
Treatment of first-row transition-metal MCl(2) (M = Ni, Co, Fe, Mn, Cr) with 2 equiv of the potassium 1,2,5-triazapentadienyl salts K(tBuNNCHCHNR) (R = tBu, NMe(2)) afforded M(tBuNNCHCHNR)(2) in 18-73% isolated yields after sublimation. The X-ray cry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4e06d33f17d47b54223bbc73df61f5a
https://doi.org/10.1021/ic302787z
https://doi.org/10.1021/ic302787z
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:01A113
Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2iPr)3 and H2O at deposition temperatures between 90 and 270 °C on Si3N4, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffractio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09593f8ae9601f603f52f1b9ed7dcca9
https://doi.org/10.1116/1.4840835
https://doi.org/10.1116/1.4840835