Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Mark S. Oliver"'
Autor:
Joseph A. Burg, Mark S. Oliver, Theo J. Frot, Mark Sherwood, Victor Lee, Geraud Dubois, Reinhold H. Dauskardt
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Organic—inorganic glasses can possess unique properties and functionalities, but their poor mechanical strength and stiffness typically limit their applicability. Here the authors demonstrate that inducing hyperconnectivity into silicon-based glass
Externí odkaz:
https://doaj.org/article/25938346ee8841f697e9e45ed0ed0136
Autor:
Duane Romer, Sue McNamara, Greg Prokopowicz, Xiang Qian Liu, Mark S. Oliver, Seiji Inaoka, Matthew Yonkey, Rosemary Bell, Lynne K. Mills, Raymond Thibault, Joe Lachowski, Kevin Wang, Scott Kisting, Michael K. Gallagher, Kim Sang Ho, Eric Huenger
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:001559-001584
The advanced packaging application space continues to evolve as mobile devices pack more and more features into a limited space. This feature concentration is causing a deviation from the conventional shrinkage pathway predicted by Moore's law which,
Autor:
Kai Zoschke, Mark S. Oliver, Michael Topper, Zidong Wang, Matthias Wegner, Jong-Uk Kim, Janet Okada, Michael K. Gallagher, Elissei Iagodkine
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:001009-001032
Temporary wafer bonding has emerged as the method of choice for handling silicon wafers during the thinning and high-temperature backside processing required for the manufacture of 3D device structures. Among the requirements for temporary wafer bond
Autor:
Lynne K. Mills, Louks David H, Joe Lachowski, Matthew T. Bishop, Greg Prokopowicz, Eric Huenger, Christopher J. Tucker, Elissei Iagodkine, Zidong Wang, Zhifeng Bai, Michael K. Gallagher, Mark S. Oliver, Kevin Wang, Scott Kisting, Raymond Thibault
Publikováno v:
International Symposium on Microelectronics. 2013:000067-000071
3D IC integration based on TSV technology has been recognized as a key enabler for next generation of electronic devices with reduced size factor and improved performances. The adoption of 3D-TSV technology also requires the development of innovative
Autor:
I. Lee, Anupam Choubey, J. Woertink, Y. Qin, David D. Fleming, Mike Gallagher, Mark S. Oliver, Avin V. Dhoble, Edgardo Anzures, Zidong Wang, C. Truong
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:001432-001451
Current demands of the industry on performance and cost has triggered the electronics industry to use high I/O counts semiconductor packages. Copper pillar technology has been widely adopted for introducing high I/O counts in Flip Chip and 3D Chip St
Autor:
Mark S. Oliver, W. Steven Johnson
Publikováno v:
Journal of Composite Materials. 43:1213-1219
The mode I critical strain energy release rates, GIC, of two polymer matrix composites were experimentally measured at temperatures ranging from -196°C to 160°C. The two composite materials investigated in this study were IM7/PETI-5 and IM7/977-2.
Publikováno v:
49th AIAA/ASME/ASCE/AHS/ASC Structures, Structural Dynamics, and Materials Conference 16th AIAA/ASME/AHS Adaptive Structures Conference 10t.
The mode I critical strain energy release rates, GIC, of three polymer matrix composite systems were experimentally measured at temperatures ranging from -196°C to 177°C. The two composite materials investigated in this study were IM7/PETI-5 and IM