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pro vyhledávání: '"Mark Pyo"'
Autor:
Yongsung Ji, Gitae Jeong, Joo-Chan Kim, Seungbae Lee, Daesop Lee, Yong-Kyu Lee, Hyun-Taek Jung, Ki-Chul Park, Hwang So-Hee, Artur Antonyan, Kwanhyeob Koh, J.W. Lee, Yoon-Jong Song, Hyeongsun Hong, Kilho Lee, Ung-hwan Pi, Ki-Hyun Hwang, Jung-Man Lim, Jong Shik Yoon, Hyunsung Jung, Daehyun Jang, Mark Pyo, Bo-Young Seo, SangHumn Lee, E. S. Jung, Byoung-Jae Bae, Hyunchul Shin, Oh Se-Chung
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
We demonstrate, for the first time, 28-nm embedded STT-MRAM operating at full industrial temperature range (−40~125°C) with >1E+6 endurance and >10 year retention for high speed MCU/IoT application. Robust cell operation is also demonstrated after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f4b5a2ce996887b82fc42cbf625362c
https://doi.org/10.1109/vlsit.2018.8510623
https://doi.org/10.1109/vlsit.2018.8510623
