Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mark P. McCartney"'
Autor:
Mark R. Theobald, Mark C. Milford, Mark K.J. Hargreaves, Mark L.J. Sheppard, Mark E. Nemitz, Mark Y.S. Tang, Mark V. R. Phillips, Mark R. Sneath, Mark L. McCartney, Mark F. J. Harvey, Mark I. D. Leith, Mark J. N. Cape, Mark D. Fowler, Mark M. A. Sutton
Publikováno v:
The Scientific World Journal, Vol 1, Pp 791-801 (2001)
There has been increasing pressure on farmers in Europe to reduce the emissions of ammonia from their land. Due to the current financial climate in which farmers have to operate, it is important to identify ammonia control measures that can be adopte
Externí odkaz:
https://doaj.org/article/5e3e8bab398f481ea982631948c83a1e
Autor:
Andy Wangkun Chen, Mudit Bhargava, Tan Peixuan, Yulin Shi, Mark P. McCartney, Yew Keong Chong, Cagla Cakir, Sriram Thyagarajan
Publikováno v:
VLSI Circuits
We present a high-performance 6T SRAM architecture equipped with low-power features of late cancel, left-right enable, input-gating, and power-gating. Measurements show that these SRAMs can support CPUs running at 4GHz while offering dynamic power sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b3edab1f64137c637378b62dc048f23
https://doi.org/10.23919/vlsic.2019.8778108
https://doi.org/10.23919/vlsic.2019.8778108
Publikováno v:
FCCM
NAND flash memory has been widely used for data storage due to its high density, high throughput, low cost, and low power. However, as flash memory manufacturers scale to smaller process technologies and store more bits per cell, the reliability and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583a87857b7ffa77e0cd175af1d17110
https://doi.org/10.1109/fccm.2011.28
https://doi.org/10.1109/fccm.2011.28
Publikováno v:
FPGA
NAND Flash memory has been widely used for data storage due to its high density, high throughput, low cost, and low power. However, as the storage cells become smaller and with more bits programmed per cell, they are expected to suffer from reduced r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5d5fc0343dd4928402c3b42edd3bf4
https://doi.org/10.1145/1950413.1950485
https://doi.org/10.1145/1950413.1950485
Publikováno v:
CICC
Device variability in modern processes has become a major concern in SRAM design, degrading performance, yield, power, and reliability. While low-swing bitlines can reduce power consumption and increase performance, offset in the sense amplifiers due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ace1d375475a4fa528e167ffd8e56e
https://doi.org/10.1109/cicc.2009.5280732
https://doi.org/10.1109/cicc.2009.5280732
Publikováno v:
CICC
A configurable replica bitline (cRBL) technique for controlling sense-amplifier enable (SAE) timing for small-swing bitline SRAMs is described. Post-silicon selection of a subset of replica bitline driver cells from a statistically designed pool of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ad088958f2b1efcf15730bcd08c3529
https://doi.org/10.1109/cicc.2008.4672108
https://doi.org/10.1109/cicc.2008.4672108