Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Mark Lawliss"'
Autor:
Mark Lawliss, Amy E. Zweber, Yurong Ying, Bradley Morgenfeld, Jean Raymond Fakhoury, Tom Faure, Christopher Magg
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper, we demonstrate the use of Aerial Imaging Metrology System (AIMS™) during mask fabrication to deliver duplicate photomasks with matching iso-dense bias (IDB) to a reference photomask. The photomask IDB trend based on AIMS™ feedback
Autor:
Richard Wistrom, Masayuki Kagawa, Kazuhiro Nishikawa, Yoshifumi Sakamoto, Takeshi Isogawa, Yusuke Toda, Mark Lawliss, Kazunori Seki, Yukio Inazuki, Lin Hu, Ramya Viswanathan, Thomas Faure, Yongan Xu, Amy E. Zweber, Karen D. Badger, Granger Lobb
Publikováno v:
SPIE Proceedings.
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole p
Autor:
Jed H. Rankin, Christina Turley, Scott Halle, Zhengqing John Qi, Eisuke Narita, Ravi K. Bonam, Mark Lawliss, Kazunori Seki, Karen D. Badger
Publikováno v:
SPIE Proceedings.
As Extreme Ultraviolet (EUV) lithography has matured, numerous imposing technical challenges have been the focus of intense scrutiny, including the EUV radiation source, reflective optics, and fundamental mask fabrication. There has been a lurking qu
Publikováno v:
SPIE Proceedings.
A variety of repairs on EUV multilayer were conducted including protection against pattern degradation in manufactural use in order to evaluate feasibility of multilayer repair and the protection schemes. The efficacy of post-repair protection techni
Autor:
Yutaka Kodera, Zhengqing John Qi, Takeshi Isogawa, Karen D. Badger, Shinji Akima, Ravi K. Bonam, Masayuki Kagawa, Kazunori Seki, Jed H. Rankin, Mark Lawliss
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
NAP-PD (Native Acting Phase – Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibili
Autor:
Ravi K. Bonam, Masayuki Kagawa, Takeshi Isogawa, Kevin W. Collins, Mark Lawliss, Lin Cheong, Jed H. Rankin, Eisuke Narita, Richard Poro, Luke Bolton, Louis Kindt, Christina Turley
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imagin
Autor:
Takeshi Isogawa, Kazunori Seki, Michael S. Hibbs, Mark Lawliss, Tod Robinson, Jeff LeClaire, Emily Gallagher
Publikováno v:
SPIE Proceedings.
Mask defectivity is a serious problem for all lithographic masks, but especially for EUV masks. Defects in the EUV blank are particularly challenging because their elimination is beyond control of the mask fab. If defects have been identified on a ma
Publikováno v:
SPIE Proceedings.
Five EUV film stacks were prepared and evaluated from the multiple viewpoints of mask repair process: etching property, CD control and wafer print. Etching property results revealed a thicker lower reflective (LR) layer stack showed good performance.
Autor:
Takeshi Isogawa, Gregory McIntyre, Mark Lawliss, Kazunori Seki, Alfred Wagner, Steven C. Nash, Emily Gallagher
Publikováno v:
SPIE Proceedings.
Defects in the EUV mask blank are one of the largest hurdles to achieving manufacturing readiness of EUV masks. For defect-free masks, the obvious approach is to order blanks that do not have defects or to shift the pattern so that remaining defects
Autor:
Gregory McIntyre, Emily Gallagher, Ron Bozak, Adam C. Smith, Tod Robinson, Roy White, Jeffrey E. Leclaire, Mark Lawliss, Michael Archuletta
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Defects within the multilayer mirrors of EUV photomasks have been a leading challenge for EUV lithography for quite some time. By creating non-planar surfaces, they distort both the amplitude and phase of reflected light. Amplitude errors generally c